RJP30E4 Datasheet – 360V, 35A, IGBT, TO-263 Type

Part Number : RJP30E4, RJP30E4DPE

Function : Si-N IGBT, 360V, 35A, (200App) 75W Tf

Image : TO-263 Package

Manufacturers : Panasonic, Renesas

Image

RJP30E4

Description : High Speed Power Switching

RJP30E4 TRANSISTOR, B1JBEN000002 Transistor

1. Drain-Source Voltage (VCES) : 360 V
2. Collector Current (IC) ; 40 A
3. Collector Current Pulsed (IC(peak)) : 250A
4. Gate-Emitter Voltage (VGES) : +-30V
5. Power Dissipation (PD) : 30 W

RJP30E4 Datasheet

Reference Datasheet PDF RJP30E3

http://www.electronica-usa.com/graphics/RJP30E3.pdf

B1JBEN000002 Datasheet

B1JBEN000002 pinout

B1JBEN000002 pdf

RJP30E3DPP-M0 Datasheet

RJP30E2DPK-M0 Datasheet

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