Part Number: RJP30H1, RJP30H1DPD-00-J2
Function: 360V, 30A, N-Channel Power MOSFET
Package: TO-263 Type
Manufacturer: Renesas Electronics
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Description
This is 360V, 30A, Silicon N Channel IGBT.
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 µA max.
Pinouts:
Absolute Maximum Ratings
1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 30 A
4. Collector dissipation : Pc = 40 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
RJP30H1 Datasheet
