RJP30H1 Datasheet PDF – N Channel IGBT – Renesas

Part Number : RJP30H1, RJP30H1DPD-00-J2

Function : N-Channel Power MOSFET

Package : TO-263 Type

Manufacturers : Renesas Electronics

Image

rjp30h1-mosfet

 

Description :

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 A max.

 

Pinouts :

RJP30H1DPD datasheet

 

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 30 A

RJP30H1DPD Datasheet

RJP30H1 Datasheet

RJP30H1DPD pdf