Part Number: RJP30H1DPD
Function: 360V, 30A, N-Channel IGBT
Package: TO-252 Type
Manufacturer: Renesas Electronics
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Description:
This is 360V, 30A, Silicon N-Channel IGBT.
Features:
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 A max.
Pinouts:
Absolute Maximum Ratings
1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 30 A
4. Collector dissipation : Pc = 40 W
5. Junction temperature : Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High speed power switching
