RJP30H1DPP-M0 Datasheet PDF – 360V, 30A, IGBT

Part Number : RJP30H1DPP-M0

Function : 360V, N-Channel IGBT

Package : TO-220FL Type

Manufacturers : Renesas Electronics

Image and Pinouts :

RJP30H1DPP-M0 datasheet

 

Description :

This is 360V, Silicon N-Channel IGBT.

Features :

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching : tr =80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage : VCE(sat)= 1.5 V typ.

4. Low leak current : ICES= 1 μA max.

5. Isolated package : TO-220FL

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 630 V

2. Gate to emitter voltage : Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 25 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications :

1. High speed power switching

 

RJP30H1DPP-M0 Datasheet PDF Download


RJP30H1DPP-M0 pdf

Other data sheets within the file : RJP30H1, RJP30H1DPP