Part Number: RJP30H1DPP-M0
Function: 360V, N-Channel IGBT
Package: TO-220FL Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description:
This is 360V, Silicon N-Channel IGBT.
Features:
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching : tr =80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage : VCE(sat)= 1.5 V typ.
4. Low leak current : ICES= 1 μA max.
5. Isolated package : TO-220FL
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 630 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 25 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High speed power switching
RJP30H1DPP-M0 Datasheet PDF Download
Other data sheets are available within the file: RJP30H1, RJP30H1DPP