RJP30H2A Datasheet – 360V, 35A, IGBT (Transistor)

The IGBT is insulated-gate bipolar transistor.

This is one of the transistor types.

Part Number : RJP30H2A, RJP30H2DPK-M0

Manufacturers : Renesas, Panasonic

Package : TO-263, TO-3P Type

Function : N Channel  IGBT,  360V, 35A

See the preview image and the PDF file for more information.

Image :

RJP30H2A datasheet igbt

Description

Silicon N Channel IGBT

Features

1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 µA max

RJP30H2A pinout

RJP30H2A pinout transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter voltage : VCES = 360 V
2. Gate to Emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 250 A
5. Collector dissipation : PC = 60 W
6. Junction to case thermal impedance : θj-c = 2.08 °C/ W
7. Junction temperature : Tj = 150 °C

Applications

High speed power switching

RJP30H2A Datasheet

RJP30H2A pdf


Reference Datasheet : RJP30H2DPK-M0