RJP30H2A Datasheet – 360V, 35A, IGBT – RENESAS

Part Number : RJP30H2A

Manufacturers : RENESAS, PANASONIC B1JBEN000004

Package : TO-263

Function : N Channel  IGBT 360V 35A

See the preview image and the PDF file for more information.

Image :
RJP30H2A image

Silicon N Channel IGBT High speed power switching

Features

1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 A max

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter voltage VCES 360 V
2. Gate to Emitter voltage VGES ±30 V
3. Collector current Ic 35 A
4. Collector peak current ic(peak) Note1 250 A
5. Collector dissipation PC 60 W
6. Junction to case thermal impedance j-c 2.08 °C/ W
7. Junction temperature Tj 150 °C

RJP30H2A Datasheet PDF


Reference Datasheet : RJP30H2DPK-M0