RJP30H2DPK-M0 Datasheet – 360V N-ch IGBT – Renesas

Part Number : RJP30H2DPK-M0

Function : Silicon N Channel IGBT High speed power switching

Package : TO-3PSG ( RENESAS Package code: PRSS0004ZH-A )

Manufacturers : Renesas Electronics

Images :

RJP30H2DPK-M0 datasheet

 

Description :

1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES= 1 uA max

Pinout
RJP30H2DPK-M0 pinout igbt
Absolute Maximum Ratings

1. Collector to Emitter voltage : VCES = 360 V
2. Gate to Emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 250 A
5. Collector dissipation : PC = 60 W
6. Junction temperature : Tj = 150 ‘C
7. Storage temperature : Tstg = –55 to +150 ‘C

RJP30H2DPK-M0 Datasheet PDF Download


RJP30H2DPK-M0 pdf

Other data sheets within the file : RJP30H2DPK, RJP30H2DPK-M0-T2