RJP30K3DPP-M0 Datasheet – Vces=360V, 40A, N-Ch IGBT

Part Number : RJP30K3DPP-M0

Function : Silicon N Channel IGBT High Speed Power Switching

Package : TO-220FL

Manufacturers : Renesas Electronics

Pinouts :

RJP30K3DPP-M0 datasheet


Description :

1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.1V typ
3. High speed switching tr = 90 ns typ, tf = 250 ns typ
4. Low leak current ICES= 1 uA max


Datasheet PDF Download

RJP30K3DPP-M0 pdf

Other data sheets within the file : RJP30, RJP30K3DPP-M0-T2