Part Number: RJP4003ASA
Function: 400V, 150A, N-channel IGBT.
Package: TSSOP 8 Pin Type
Manufacturer: Renesas Technology
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Description
RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package (TSSOP-8) VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 5 8 4 1 4 3 2 1 1, 2, 3, 4 : Collector 5, 6, 7 : Emitter 8 : Gate 5 6 7 8 Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings 400 ±6 ±8 150 – 40 to +150 – 40 to +150 Unit V V V A °C °C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) Rev.1.00 Oct 13, 2006 page 1 of 4 RJP4003ASA Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Min. 450 — — 0.5 — — Typ. — — — 0.7 5.0 5000 Max. — 10 ±10 1.5 10.0 — Unit V µA µA V V pF Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 4 V VCE = 25 V, VGE = 10 V, f = 1MHz Performance Curves Maximum Pulse Collector Current (Conductive Capability in Strobe Flash Applications) 200 Pulse Collector Current ICM (A) 150 TC = 70°C CM = 400 µF RG = 68 Ω 100 50 0 0 2 4 6 8 Gate – Emitter Voltage VGE (V) Rev.1.00 Oct 13, 2006 page 2 of 4 RJP4003ASA Application Example VCM Trigger Transformer Xe Tube CM + – 4 3 2 1 IGBT driver RD5CYD08 RD5CYDT08 5 6 7 8 VCM ICP CM VGE Recommended Operation Maximum Operation Conditions Conditions 330 V 350 V 130 A 330 µF 5V 150 A 400 µF 4V Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ µs. In general, when RG (off) = 68 Ω, it is satisfied. 3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor (CM = 400 µF). Repetition period under full luminescence condition is over 3 seconds. 5. Total operation hours applied to the gate-emitter voltage must be with […]
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RJP4003ASA Datasheet
