Part Number : RJP6065DPM
Function : 630V, 40A, N-Channel IGBT
Package : TO-3PFM Type
Manufacturers : Renesas Electronics
Image :
Description :
This is 630V, Silicon N-Channel IGBT.
Features :
1. Low collector to emitter saturation voltage :
VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)
2. Gate to emitter voltage rating : ± 30 V
3. Pb-free lead plating and chip bonding
Image and Pinouts :
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : Vces = 630 V
2. Gate to emitter voltage : Vges = ± 30 V
3. Collector current : Ic = 40 A
4. Collector dissipation : Pc = 50 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
RJP6065DPM Datasheet PDF Download
Other data sheets within the file : RJP6065, RJP-6065