Part Number : RJP6065DPM
Function : Silicon N Channel IGBT High Speed Power Switching / TO-3PFM Package
Manufacturers : Renesas Electronics
Pinouts :
Description :
– Low collector to emitter saturation voltage
VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)
– Gate to emitter voltage rating 30 V
– Pb-free lead plating and chip bonding
Datasheet PDF Download
Other data sheets within the file :
RJP6065,RJP6065DPM