Part Number: RJP6065DPM
Function: 630V, 40A, N-Channel IGBT
Package: TO-3PFM Type
Manufacturer: Renesas Electronics
Image:
Description
This is 630V, Silicon N-Channel IGBT.
Features
1. Low collector to emitter saturation voltage :
VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)
2. Gate to emitter voltage rating : ± 30 V
3. Pb-free lead plating and chip bonding
Image and Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 630 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 40 A
4. Collector dissipation : Pc = 50 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
RJP6065DPM Datasheet PDF Download
Other data sheets are available within the file: RJP6065, RJP-6065