RJP6065DPM Datasheet PDF – 630V, 40A, N-Channel IGBT

Part Number : RJP6065DPM

Function : 630V, 40A, N-Channel IGBT

Package : TO-3PFM Type

Manufacturers : Renesas Electronics

Image :

RJP6065DPM datasheet

 

Description :

This is 630V, Silicon N-Channel IGBT.

Features :

1. Low collector to emitter saturation voltage :

VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)

2. Gate to emitter voltage rating : ± 30 V

3. Pb-free lead plating and chip bonding

Image and Pinouts :

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 630 V

2. Gate to emitter voltage : Vges = ± 30 V

3. Collector current : Ic = 40 A

4. Collector dissipation : Pc = 50 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

RJP6065DPM Datasheet PDF Download


RJP6065DPM pdf

Other data sheets within the file : RJP6065, RJP-6065