Part Number : RJP63F3, RJP63F3DPP-M0
Function : 630V, Silicon N Channel IGBT
Package : TO-220FL Type
Manufacturers : Renesas Electronics
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Description :
1. Trench gate and thin wafer technology (G6H series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
3. High speed switching tf = 100 ns typ
4. Low leak current ICES= 1 μA max
5. Isolated package TO-220FL
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : VCES = 630 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 40 A
4. Collector peak current : ic(peak) – 200 A
5. Collector dissipation : PC = 30 W
Applications :
High Speed Power Switching
RJP63F3 Datasheet
