RJP63F3 Datasheet – Nch IGBT, Vces=630V – Renesas

Part Number : RJP63F3, RJP63F3DPP-M0

Function : Silicon N Channel IGBT, High Speed Power Switching

Package : TO-220FL Type

Manufacturers : Renesas Electronics

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RJP63F3 igbt renesas

 

Description :

1. Trench gate and thin wafer technology (G6H series)

2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

3. High speed switching tf = 100 ns typ

4. Low leak current  ICES= 1 μA max

5. Isolated package TO-220FL

 

RJP63F3 datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 630 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 40 A
4. Collector peak current : ic(peak) – 200 A
5. Collector dissipation : PC  = 30 W

 

 

RJP63F3 Datasheet

 

RJP63F3DPP-M0 pdf