RJP63F3DPP-M0 Datasheet PDF ( 630V, 40A, IGBT )

Part Number : RJP63F3DPP-M0

Function : 630V, 40A, Silicon N Channel IGBT

Package : TO-220FL type

Pinouts :

Description :

• Trench gate and thin wafer technology (G6H series)

• Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ

• High speed switching tf = 100 ns typ

• Low leak current ICES= 1 μA max

• Isolated package TO-220FL

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 630 V

2. Gate to emitter voltage : VGES = ± 30 V

3. Collector current : Ic = 40 A

4. Channel temperature : Tch = 150 °C

5. Storage temperature : Tstg = -55 to +150 °C

Applications :

High Speed Power Switching

Other data sheets within the file : RJP63F, RJP63F3, RJP63F3DPP