RJP63K2 Datasheet PDF – 630V, 35A, N-Ch, IGBT – Renesas

Part Number : RJP63K2

Function : 630V, 35A, N-Channel IGBT

Package : TO-220FL Type

Manufacturers : Renesas Electronics

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RJP63K2 IGBT Transistor

Description :

This is 630V, 35A, Silicon N Channel IGBT

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Features :

1.  Trench gate and thin wafer technology (G6H-II series)

2.  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ

3.  High speed switching: tr= 60 ns typ, tf= 200 ns typ.

4.  Low leak current: ICES= 1 uA max

5.  Isolated package TO-220FL

 

Pinouts :

RJP63K2 datasheet

 

Absolute Maximum Ratings :

1. Collector to emitter voltage : VCES = 630 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 35 A

4. Collector peak current : ic(peak) = 200 A

5. Collector dissipation : PC = 25 W

Applications :

1. High Speed Power Switching

RJP63K2 Datasheet PDF

RJP63K2DPP-M0 pdf

 

Other data sheets within the file : RJP63K2DPP-M0

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