RJP63K2 Datasheet PDF – N Channel IGBT – Renesas

Part Number : RJP63K2

Function : Silicon N Channel IGBT High Speed Power Switching

Manufacturers : Renesas Electronics

Pinouts :

RJP63K2 datasheet


Description :

1.  Trench gate and thin wafer technology (G6H-II series)
2.  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3.  High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4.  Low leak current: ICES= 1 A max
5.  Isolated package TO-220FL


RJP63K2 Datasheet PDF

RJP63K2DPP-M0 pdf

Other data sheets within the file : RJP63K2DPP-M0