Part Number : RJP63K2DPK-M0
Function : N-Channel IGBT
Manufacturers : Renesas Electronics
Pinouts : 
Description :
* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
* High speed switching: tr= 60 ns typ, tf= 200 ns typ.
* Low leak current: ICES= 1 A max
RJP63K2DPK-M0 Datasheet PDF Download
Other data sheets within the file : RJP63K2DPK, RJP63K2DPK-M0