RJP63K2DPK-M0 Datasheet PDF – 630V, N-Ch, IGBT

Part Number : RJP63K2DPK-M0

Function : 630V, N-Channel IGBT

Package : TO-3PSG Type

Manufacturers : Renesas Electronics

Image and Pinouts :

RJP63K2DPK-M0 datasheet

Description :

This is Silicon N Channel IGBT.

Features :

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ

3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.

4.  Low leak current: ICES= 1 μA max

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter voltage : VCES = 630 V

2. Gate to Emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 200 A

5. Collector dissipation : PC = 60 W

RJP63K2DPK-M0 Datasheet PDF Download

RJP63K2DPK-M0 pdf

Other data sheets within the file : RJP63K2DPK, RJP63K2