Part Number: RJP63K2DPP-M0
Function: 630V, Silicon N-Channel IGBT
Package: TO-220FL type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description:
This is 630V, 35A, Silicon N-Channel IGBT.
Features:
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4. Low leak current: ICES= 1 μA max
5. Isolated package TO-220FL
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 630 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 25 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed Power Switching
RJP63K2DPP-M0 Datasheet PDF Download
Other data sheets are available within the file: RJP63K2, RJP63K2DPP