RJP63K2DPP-M0 Datasheet PDF – 630V, 35A, N-Ch, IGBT

Part Number : RJP63K2DPP-M0

Function : 630V, Silicon N-Channel IGBT

Package : TO-220FL type

Manufacturers : Renesas Electronics

Image and Pinouts :

RJP63K2DPP-M0 datasheet

 

Description :

This is 630V, 35A, Silicon N-Channel IGBT.

 

Features :

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ

3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.

4. Low leak current: ICES= 1 μA max

5. Isolated package TO-220FL

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 630 V

2. Gate to emitter voltage : Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 25 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

 

Applications :

1. High Speed Power Switching

 

RJP63K2DPP-M0 Datasheet PDF Download


RJP63K2DPP-M0 pdf

Other data sheets within the file : RJP63K2, RJP63K2DPP