S50VB100 PDF – Bridge Diode (1000V, 50A), Rectifier

Part Number: S50VB100

Function: Bridge Diode (1000V, 50A)

Package: 4 Pin Type

Manufacturer: Leshan Reeshine, Shindengen Electric, Kingtronics

Images:S50VB100 diode


The S50VB100 is 1000V, 50A, Bridge Rectifier.

A bridge rectifier is a type of rectifier circuit commonly used to convert AC voltage to DC voltage. It consists of four diodes connected in a bridge configuration.

The advantages of using a bridge rectifier include:

1. Full-wave rectification: The bridge rectifier provides full-wave rectification, meaning that it converts both halves of the AC input waveform into DC. This results in higher efficiency and a smoother output compared to half-wave rectifiers.

2. Simplicity: The bridge rectifier circuit is relatively simple and consists of only four diodes, making it cost-effective and easy to implement.

3.High voltage and current handling: Bridge rectifiers are available in various voltage and current ratings, allowing them to handle a wide range of power supply requirements.

Bridge rectifiers are commonly used in various applications, including power supplies for electronic devices, battery chargers, motor control circuits, and LED lighting systems.

When selecting a bridge rectifier, it is essential to consider parameters such as maximum voltage and current ratings, forward voltage drop, reverse recovery time, and package type to ensure compatibility with your specific application requirements.

● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, With heatsink, Tc=95℃ Average Rectified Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ Peak Surge Forward Current I2t 1ms≦t<10ms Tc=25℃ Current Squared Time Vdis Terminals to case, AC 1 minute Dielectric Strength TOR (Recommended torque : 0.6N・m) Mounting Torque

● Electrical Characteristics (Tc=25℃) Item Symbol Conditions VF IF=25A, Pulse measurement, Rating of per diode Forward Voltage IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance θjc junction to case   Ratings Unit -40~150 ℃ 150 ℃ 800 V 50 A 500 A 800 A2s 2 kV 0.8 N・m Ratings Unit Max.1.05 V Max.10 μA Max.0.5 ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S50VBx 100 Forward Voltage 10 Forward Current IF [A] Tc=150 °C [TYP] Tc=25 °C [TYP] 1 Pulse measurement per diode 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage VF [V] S50VBx 160 140 Forward Power Dissipation Forward Power Dissipation PF [W] 120 100 80 60 40 20 0 SIN 0 10 20 30 40 50 60 70 80 Average Rectified Forward Current IO [A] Tj = Tjmax S50VBx 80 Derating Curve Average Rectified Forward Current IO [A] 70 60 50 40 30 20 10 0 SIN 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = VRM 0 0 IO VR tp D=tp /T T S50VBx 700 Peak Surge Forward Capability IFSM 10ms 10ms 600 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25 °C before surge current is applied 500 400 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycles] […]

S50VB100 pdf datasheet

S50VB100 PDF Datasheet