Part Number: SBT42F
Marking : M1A
Function: 300V, 500mA, NPN Silicon Transistor
Package: SOT-23F Type
Manufacturer: AUK corp
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Description
NPN Silicon Transistor
Applications:
• High voltage application
• Telephone application
Features
• Collector-Emitter voltage VCEO=SBT42F : 300V
• Complementary pair with SBT92F
Ordering Information :
Type NO. SBT42F Marking M1A Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2077-000 0.9±0.1 0~0.1 1 SBT42F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter Current Collector dissipation Junction temperature Storage temperature – ： Package Mounted on 99.5% Alumina 10×8×0.6mm (Ta=25°C) Symbol VCBO VCEO VEBO IC IE PC- Tj Tstg Ratings 300 300 6 500 -500 350 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 300 V
2. Collector to Emitter Voltage: Vceo = 300 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 500 mA
5. Collector Dissipation : Pc = 350 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
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