Part Number: SMK0825D
Function: 250V, 8A, Advanced N-Channel Power MOSFET
Package: TO-252 Type
Manufacturer: KODENSHI KOREA
Images:
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Description
SMK0825D is Advanced N-Channel Power MOSFET.
Features
1. High voltage: BVDSS=250V (Min.)
2. Low gate charge: Qg=14.5nC (Typ.)
3. Low drain-source On resistance: RDS(on)=0.43Ω (Max.)
4. RoHS compliant device
5. Halogen free package
Ordering Information :
Part Number SMK0825D Marking SMK0825
Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic
Drain-source voltage Repetitive Avalanche Voltage (Note 1, 2) Gate-source voltage Drain current (DC) – Drain current (Pulsed) – Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy Power dissipation Junction temperature Storage temperature range – Limited only maximum junction temperature (Note 1) Symbol VDSS VDS(Avalanche) VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD TJ Tstg Rating 250 300 30 8 5.2 32 356 8 7.4 48 150 -55~150 Unit V V V A A A mJ A mJ W C C Rev. date: 12-AUG-11 KSD-T6O031-001 www.auk.co.kr 1 of 8 SMK0825D Thermal Characteristics Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth(j-c) Rth(j-a) Rating Max. 2.6 Max. 50 Unit C/W Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Internal gate resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time.
Applications:
1. Swtiching Regulator […]
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