SN54ABTH245 Datasheet PDF

Part Number : SN54ABTH245


Manufacturers : Texas Instruments

Pinouts :

SN54ABTH245 datasheet

Description :

State-of-the-Art EPIC-ΙΙBBiCMOS Design
Significantly Reduces Power Dissipation
Latch-Up Performance Exceeds 500 mA Per JESD 17
Typical VOLP(Output Ground Bounce) < 1 V at VCC= 5 V, TA= 25°C
Ioff and Power-Up 3-State Support Hot Insertion
High-Drive Outputs (–32-mA IOH, 64-mA IOL)
Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown
Package Options Include Plastic Small-Outline (DW),
Shrink Small-Outline(DB), Thin Shrink Small-Outline (PW), and
Thin Very Small-Outline (DGV) Packages,
Ceramic Chip Carriers (FK), Plastic (N) and Ceramic (J) DIPs, and Ceramic Flat (W)Package

These octal bus transceivers are designed for asynchronous communication between data buses. The devices transmit data from the A bus to the B bus or from the B bus to the A bus,depending on the logic level at the
direction-control (DIR) input. The output-enable(OE) input can be used to disable the device so the buses are effectively isolated.

When VCCis between 0 and 2.1 V, the device is in the high-impedance state during power up or power down.
However, to ensure the high-impedance state above 2.1 V, OEshould be tied to VCCthrough a pullup resistor;
the minimum value of the resistor is determined by the current-sinking capability of the driver.
This device is fully specified for hot-insertion applications using Ioff
and power-up 3-state. The Ioffcircuitry
disables the outputs, preventing damaging current backflow through the device when it is powered down. The
power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down,
which prevents driver conflict.

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SN54ABTH245 pdf

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