STH8NB90FI Datasheet PDF – 900V, 8A, Power MOSFET – ST

Part Number : STH8NB90FI

Function : 900V, 1.1 OHM, 8A , N-CHANNEL POWER MOSFET

Package : TO-247, ISOWATT218 Type

Manufacturers : STMicroelectronics

Pinouts :

STH8NB90FI datasheet

Description :

Using the latest high voltage MESH OVERAY process, STMicroelectronis has designed an advanved family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest Rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Features

1. TYPICAL RDS(on) = 1.1 W
2. EXTREMELY HIGH dv/dt CAPABILITY
3. 100% AVALANCHE TESTED
4. VERY LOW INTRINSIC CAPACITANCES
5. GATE CHARGE MINIMIZED

 

Absolute maximum ratings

1. Drain-source Voltage (VGS = 0) : VDS = 900 V
2. Drain-gate Voltage (RGS = 20 kW) : VDGR = 900 V
3. Gate- source Voltage : VGS = ±30 V
4. Drain Current (continuos) at TC = 25°C : ID = 5 A
5. Total Dissipation at TC = 25°C : Ptot = 80 W

 

Applications

1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITH MODE POWER SUPPLIES (SMPS)
3. DC-AC CONVERTERS FOR WELDING EQUIPMENT

 

Other data sheets within the file : H8NB90FI, 8NB90FI, 8NB90, STW8NB90, STH8NB90

STH8NB90FI Datasheet PDF Download


STH8NB90FI pdf