STP2HNC60FP Datasheet PDF – 600V, 2.2A, MOSFET – ST

Part Number: STP2HNC60FP

Function: 600V,  2.2A, N-Channel MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Image and Pinouts:

STP2HNC60FP datasheet

 

Description

This is 600V,  4 Ohm, 2.2A, N-CHANNEL MOSFET.

The PowerMESH is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

 

Features

1. TYPICAL RDS(on) = 4 Ω

2. EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. NEW HIGH VOLTAGE BENCHMARK

5. GATE CHARGE MINIMIZED

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 2.2 A

4. Total Dissipation : Ptot = 30 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITH MODE POWER SUPPLIES (SMPS)

3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

 

Other data sheets are available within the file: P2HNC60F, STP2HNC60, STP2HNC60F

STP2HNC60FP Datasheet PDF Download


STP2HNC60FP pdf

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