Part Number : SVF10N65F
Function : 10A, 650V N-CHANNEL MOSFET
Package : TO-220F-3L Type
Manufacturers : HANGZHOU SILAN MICROELECTRONICS ( http://www.silan.com.cn )
SVF10N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
1. Drain-Source Voltage : VDS = 650 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current Pulsed : IDM = 40 A
4. Pulsed Avalanche Energy : EAS = 608 mJ