Part Number: SVF2N60F
Function: 2A, 600V, N-CHANNEL MOSFET
Package: TO-251, TO-252, TO-220 Type
Manufacturer: Silan Microeletronics
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Description
SVF2N60M, SVF2N60F, SVF2N60T, SVF2N60D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
Features
1. 2A,600V,RDS(on)(typ.)=3.7@VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2 A
4. Total Power Dissipation: Pd = 23 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C