Part Number: SVF2N60F
Function: 2A, 600V, N-CHANNEL MOSFET
Package: TO-251, TO-252, TO-220 Type
Manufacturer: Silan Microeletronics
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Description
SVF2N60M, SVF2N60F, SVF2N60T, SVF2N60D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
Features
2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60DTR Package Type TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60D Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.21 Page 1 of 10 SVF2N60M/F/T/D_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 34 0.27 Rating SVF2N60M/D SVF2N60T 600 ±30 2.0 8 44 0.35 115 -55～+150 -55～+150 23 0.18 SVF2N60F Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVF2N60M/D 3.7 110 SVF2N60T 2.86 62.5 SVF2N60F 5.56 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C REV:1.1 2010.10.21 Page 2 of 10 SVF2N60M/F/T/D_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IS ISM VSD Trr Qrr Test con […]