20N60S1 Datasheet – Vds=600V, N-ch Power MOSFET – Fuji

Part Number : 20N60S1, FMP20N60S1

Function : N-Channel enhancement mode power MOSFET

Package : TO-220AB Type

Manufacturers : Fuji Electric

Image :

20N60S1 mosfet fuji

Description :

Super J-MOS series, N-Channel enhancement mode power MOSFET

Features

1. Low on-state resistance
2. Low switching loss
3. easy to use (more controllabe switching dV/dt by Rg)

Applications

1. UPS
2. Server
3. Telecom
4. Power conditioner system
5. Power supply

Absolute Maximum Ratings at TC=25°C

1. Drain-Source Voltage : Vds = 600V
2. Repetitive and Non-Repetitive Maximum Avalanche Current : IAR = 6.6 A
3. Non-Repetitive Maximum Avalanche Energy : EAS = 472.2 mJ

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Pinout

20N60S1 datasheet pinout

 

20N60S1 Datasheet


FQP13N10 Datasheet PDF

Part Number : FQP13N10

Function : N-Channel QFET MOSFET 100 V, 12.8 A, 180 mΩ

Manufacturers : Fairchild Semiconductor

Pinouts :

FQP13N10 datasheet

Description :

Description
This N-Channel enhancement mode power MOSFET is pro
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.

Features
• 12.8 A, 100 V, Rds(on)= 180 mΩ(Max.) @ Vgs= 10 V, Id= 6.4 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

Datasheet PDF Download

FQP13N10 pdf

Other data sheets within the file :
FQP13N10