Part Number : HM2301B, Si2301DS
Marking : A1SHB
Function : P-Channel Trench Power MOSFET
Package : SOT-23 Type
Manufactures : H&M Semiconductor, Vishay
The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
● VDS = -20V,ID =-2.5A
RDS(ON) < 160mΩ @ VGS =-4.5V
RDS(ON) < 230mΩ @ VGS =-2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
● Battery protection
● Load switch
● Power management
1. Drain-Source Voltage : VDS = -20
2. Gate-Source Voltage : VGS = ±8V
3. Continuous Drain Current : ID = -2.3
4. Maximum Power Dissipation : PD = 0.35 W
Part Number : TLK111
Function : TLK111 Industrial Temperature 10/100Mbs Ethernet Physical Layer Transceiver
Manufacturers : Texas Instruments
The TLK111 is a single-port Ethernet PHY for 10Base-T and 100Base TX signaling. This device integrates all the physical-layer functions needed to transmit and receive data on standard twisted-pair cables.
Additionally, the TLK111 supports 100Base-FX signaling via an external optical transceiver. The TLK111 supports the standard Media Independent Interface (MII) and Reduced Media Independent Interface (RMII) for direct connection to a Media Access Controller (MAC).
The TLK111 is designed for power-supply flexibility, and can operate with a single 3.3V power supply or with combinations of 3.3V and 1.55V power supplies for reduced power operation.
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