A1SHB Datasheet – P-Channel Trench Power MOSFET

Part Number : HM2301B, Si2301DS

Marking : A1SHB

Function : P-Channel Trench Power MOSFET

Package : SOT-23 Type

Manufactures : H&M Semiconductor, Vishay



The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.




● VDS = -20V,ID =-2.5A
RDS(ON) < 160mΩ @ VGS =-4.5V
RDS(ON) < 230mΩ @ VGS =-2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package

● Battery protection
● Load switch
● Power management

Maximum ratings

1. Drain-Source Voltage : VDS = -20
2. Gate-Source Voltage : VGS = ±8V
3. Continuous Drain Current : ID = -2.3
4. Maximum Power Dissipation : PD = 0.35 W

A1SHB Datasheet



TLK111 Datasheet PDF

Part Number : TLK111

Function : TLK111 Industrial Temperature 10/100Mbs Ethernet Physical Layer Transceiver

Manufacturers : Texas Instruments

Pinouts :

TLK111 datasheet

Description :

The TLK111 is a single-port Ethernet PHY for 10Base-T and 100Base TX signaling. This device integrates all the physical-layer functions needed to transmit and receive data on standard twisted-pair cables.

Additionally, the TLK111 supports 100Base-FX signaling via an external optical transceiver. The TLK111 supports the standard Media Independent Interface (MII) and Reduced Media Independent Interface (RMII) for direct connection to a Media Access Controller (MAC).

The TLK111 is designed for power-supply flexibility, and can operate with a single 3.3V power supply or with combinations of 3.3V and 1.55V power supplies for reduced power operation.

TLK111 Datasheet PDF Download

TLK111 pdf

Other data sheets within the file :