Part Number: MMZ09312BT1
Function: Heterojunction Bipolar Transistor Technology (InGaP HBT)
Package: QFN 3×3, 12 Pin Type
Manufacturer: Freescale Semiconductor
Image and Pinouts:
The MMZ09312B is a 2–stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage infemtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost–effective, surface mount QFN plastic package.
MMZ09312BT1 Datasheet PDF Download
Other data sheets are available within the file: MMZ09312BT