1. Lockable test button models now available.
2. Built-in mechanical operation indicator.
3. Provided with nameplate.
4. AC type is equipped with a coil-disconnection self-diagnostic function (LED type).
5. High switching power (1-pole: 10 A).
6. Environment-friendly (Cd, Pb free).
7. Wide range of Sockets also available.
Other data sheets within the file : G2R-1-S, G2R-1-SD, G2R-1-SN, G2R-1-SND
The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 words x 16 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications.
1. JEDEC standard LVTTL 3.3V power supply
2. MRS Cycle with address key programs
(1) CAS Latency (2 & 3)
(2) Burst Length (1,2,4,8,& full page)
(3) Burst Type (sequential & Interleave)
3. 4 banks operation
4. All inputs are sampled at the positive edge of the system clock
5. Burst Read single write operation
6. Auto & Self refresh
7. 4096 refresh cycle
8. DQM for masking
Other data sheets within the file : VDS7616A4A-55, VDS7616A4A, VDS7616A4A-7