AM29F800BB-55EE Datasheet PDF – 8 Mbit, Erase Flash Memory

Part Number: AM29F800BB-55EE

Function: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit), Boot Sector Flash Memory

Pakcage : 48-pin TSOP, 44-pin SO

Manufacturer: Advanced Micro Devices

Pinouts:

AM29F800BB-55EE datasheet

 

Description

The Am29F800B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed insystem with the standard system 5.0 volt VCC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

Features

1. Single power supply operation
(1) 5.0 Volt-only operation for read, erase, and program operations
(2) Minimizes system level requirements
2. Manufactured on 0.32 µm process technology
(1) Compatible with 0.5 µm Am29F800 device
3. High performance
(1) Access times as fast as 55 ns
4. Low power consumption (typical values at 5 MHz)
(1) 1 µA standby mode current
(2) 20 mA read current (byte mode)
(3) 28 mA read current (word mode)
(4) 30 mA program/erase current
5. Flexible sector architecture
(1) One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode)
(2) One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode)
(3) Supports full chip erase
(4) Sector Protection features:

Other data sheets are available within the file: AM29F800BB-55EF, AM29F800BB-55EI, AM29F800BB-55EK, AM29F800BB-55SE

AM29F800BB-55EE Datasheet PDF Download


AM29F800BB-55EE pdf

2SC458 Datasheet PDF – 30V, 0.1A, NPN Transistor – Renesas

Part Number: 2SC458

Function: Silicon NPN Epitaxial Transistor

Pacakge : TO-92 Type

Manufacturer: Renesas Electronics

Pinouts:

2SC458 datasheet

 

Description

30 V, 100 mA, 200 mW, NPN Transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = 30 V
2. Collector to emitter voltage : VCEO = 30 V
3. Emitter to base voltage : VEBO = 5 V
4. Collector current : IC = 100 mA
5. Emitter current : IE = – 100 mA
6. Collector power dissipation PC : 200 mW

Applications

1. Low frequency amplifier
2. Complementary pair with 2SA1029 and 2SA1030

 

Other data sheets are available within the file: 2SC2308, C2308, C458

 

2SC458 Datasheet PDF Download


2SC458 pdf

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