5Q765RT Datasheet PDF – 500765RT, 5Q0765RT – Fairchild

Part Number : 5Q765RT, 5Q0765RT

Function : Fairchild Power Switch(FPS)

Package : TO-220F-5L Type

Manufacturers : Fairchild Semiconductor

Image

5Q765RT image, 500765RT, 5Q0765RT

Description :

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC.

 

PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage
protection, temperature compensated precision current sources for loop compensation and fault protection circuit.

Pinouts :

5Q765RT datasheet

 

Block Diagram500765RT, 5Q0765RT Block Diagram

Features

1. Quasi Resonant Converter Controller
2. Internal Burst Mode Controller for Stand-by Mode
3. Pulse by Pulse Current Limiting
4. Over Current Latch Protection
5. Over Voltage Protection (Vcc: Min. 27V)
6. Internal Thermal Shutdown Function
7. Under Voltage Lockout
8. Internal High Voltage Sense FET
9. Auto-Restart Mode

 

5Q765RT Datasheet PDF

5Q765RT pdf

Other data sheets within the file : 500765RT, 5Q12656RT, 5Q1565RF, 5Q765RT, KA5Q12656RT

 

G80N60 Datasheet – Vces = 660V, Ultrafast IGBT – Fairchild

This is one of the IGBT types.

This part name is G80N60.

This product has Ultrafast IGBT ( Vces = 600V ) functions.

Manufacturers of product is Fairchild Semiconductor.

See the preview image and the PDF file for more information.

Image :

G80N60 image

 

Description :

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and  switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

G80N60 datasheet pinout

Features

1. High speed switching
2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A
3. High input impedance
4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)

Absolute Maximum Ratings TC = 25°C

1. Collector-Emitter Voltage : Vces = 600 V
2. Gate-Emitter Voltage : Vges = ± 20 V
3. Collector Current : Ic = 80 A
4. Maximum Power Dissipation : Pd = 195 W

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

 

G80N60 Datasheet PDF Download

G80N60 pdf

 

Other data sheets within the file :  G80N60UFD, SGH80N60UFD