The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages.
The word wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7. This device requires only a single 3.0 volt VCCsupply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.
This device is manufactured using AMD’s 0.35 µm process technology, and offers all the features and benefits of the Am29DL800, which was manufactured using a 0.5 µm technology.
The M25P16 is an 16Mb (2Mb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus. The device supports high-performance commands for clock frequency up to 75MHz. The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM command. It is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. Memory can be viewed either as 8,192 pages or as 2,097,152 bytes. The entire memory can be erased using the BULK ERASE command, or it can be erased one sector at a time using the SECTOR ERASE command. This datasheet details the functionality of the M25P16 device based on 110nm process.