The IGBT is insulated-gate bipolar transistor.
This is one of the transistor types.
Part Number : IHW30N160R2
Marking : H30R1602
Function : 1600V, 30A, IGBT (Transistor)
Pacakge : TO-247 Type
Manufactures : Infineon Technologies AG
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Description :
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
Features
1. Powerful monolithic Body Diode with very low forward voltage
2. Body diode clamps negative voltages
3. Trench and Fieldstop technology for 1600 V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
4. NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
5. Low EMI
6. Qualified according to JEDEC for target applications
7. Pb-free lead plating; RoHS compliant
Absolute maximum ratings ( Ta=25°C )
1. Collector-emitter voltage : Vce = 1600 V
2. DC collector current : Ic = 60 V
3. Pulsed collector current : Icpuls = 90 A
4. Gate-emitter voltage : Vge = ± 20 V
5. Power dissipation : Ptot = 312 W
6. Operating junction temperature : Tj = -40 ~ +175°C
Pinouts :
Other data sheets within the file : IHW30N160R
H30R1602 Datasheet PDF Download
