20N60A4D Datasheet – 600V, IGBT – HGTG20N60A4D

Part Number : 20N60A4D, HGTG20N60A4D

Function : 600V, SMPS Series N-Channel IGBT

Package : TO-247 Type

Manufactures : Fairchild Semiconductor

Images :

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20N60A4D image

Description :

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49341.

Features :

• >100kHz Operation At 390V, 20A

• 200kHz Operation At 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time 55ns at TJ = 125 °C

• Low Conduction Loss

• Temperature Compensating SABER Model www.fairchildsemi.com

Packaging :

JEDEC STYLE TO-247 Ordering Information PART NUMBER HGTG20N60A4D PACKAGE TO-247 BRAND 20N60A4D COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1  HGTG20N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . .BVCES Collector Current Continuous At TC = 25oC . IC25 At TC = 110oC . . . IC110 Collector Current Pulsed (Note 1) . . . ICM Diode Continuous Forward Current IFM110 Diode Maximum Forward Current IFM Gate to Emitter Voltage Continuous . VGES Gate to Emitter Voltage Pulsed . . . VGEM Switching Safe Operating Area at TJ = 15 […]

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20N60A4D Datasheet

G4BC30KD Datasheet – 600V, 16A, IGBT – IRG4BC30KD

Part Number : G4BC30KD, IRG4BC30KD

Function : 600V, 16A, IGBT

Package : TO-220AB Type

Manufactures : International Rectifier

Images :

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G4BC30KD image

Description :

This is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

Features :

• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V

• Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations

• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-ch an nel Benefits

• Latest generation 4 IGBTs offer highest power density motor controls possible

• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

• This part replaces the IRGBC30KD2 and IRGBC30MD2 products • For hints see design tip 97003 TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD […]

G4BC30KD Datasheet