RJH3047 Datasheet PDF – 330V, 50A IGBT – Renesas

Part Number : RJH3047

Function : IGBT, 330V, 50A

Package :  TO-3P Type

Manufacturers : Renesas ( https://www.renesas.com/ )

Description : INSULATED GATE BIPOLAR TRANSISTOR

RJH3047

Silicon N Channel IGBT High Speed Power Switching

Basic Information

1. Production Status : EOL
2. PLP : –
3. Number of Channels : Single
4. Configuration [Device] : B-in FRD
5. VCES (V) : 330
6. Ic (Peak) (A) : 200
7. IC (A) @25 °C : 50
8. VCE (sat) (V) : 1.6
9.  tf (µs) typ. : 0.16

RJH3047DPK Datasheet

RJH3047 Datasheet

RJH3047 Datasheet

 

RJP30H1 Datasheet PDF – N Channel IGBT – Renesas

Part Number : RJP30H1, RJP30H1DPD-00-J2

Function : N-Channel Power MOSFET

Package : TO-263 Type

Manufacturers : Renesas Electronics

Image

rjp30h1-mosfet

 

Description :

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 µA max.

 

Pinouts :

RJP30H1DPD datasheet

 

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 30 A
4. Collector dissipation : Pc = 40 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C

RJP30H1DPD Datasheet

RJP30H1 Datasheet

RJP30H1DPD pdf