Semiconductor Pinout Informations
Part Number : RJH3047
Function : IGBT, 330V, 50A
Package : TO-3P Type
Manufacturers : Renesas ( https://www.renesas.com/ )
Description : INSULATED GATE BIPOLAR TRANSISTOR
Silicon N Channel IGBT High Speed Power Switching
Basic Information
1. Production Status : EOL
2. PLP : –
3. Number of Channels : Single
4. Configuration [Device] : B-in FRD
5. VCES (V) : 330
6. Ic (Peak) (A) : 200
7. IC (A) @25 °C : 50
8. VCE (sat) (V) : 1.6
9. tf (µs) typ. : 0.16
Part Number : RJP30H1, RJP30H1DPD-00-J2
Function : N-Channel Power MOSFET
Package : TO-263 Type
Manufacturers : Renesas Electronics
Image
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 µA max.
Pinouts :
Absolute Maximum Ratings
1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 30 A
4. Collector dissipation : Pc = 40 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
