This post explains for the IGBT.
The Part Number is RJP30H2A, RJP30H2DPK-M0.
The package is TO263-3L, D2PAK, TO-3P
The function of this semiconductor is Silicon N Channel IGBT.
Preview images :
RJP30H2A is 360V, 35A, Silicon N Channel IGBT.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 μA max
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 360 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 60 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
1. High speed power switching
RJP30H2A PDF Datasheet
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