Part Number : 20N60A4D, HGTG20N60A4D
Function : 600V, SMPS Series N-Channel IGBT
Package : TO-247 Type
Manufactures : Fairchild Semiconductor
Images :
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Description :
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49341.
Features :
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time 55ns at TJ = 125 °C
• Low Conduction Loss
• Temperature Compensating SABER Model www.fairchildsemi.com
Packaging :
JEDEC STYLE TO-247 Ordering Information PART NUMBER HGTG20N60A4D PACKAGE TO-247 BRAND 20N60A4D COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 HGTG20N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . .BVCES Collector Current Continuous At TC = 25oC . IC25 At TC = 110oC . . . IC110 Collector Current Pulsed (Note 1) . . . ICM Diode Continuous Forward Current IFM110 Diode Maximum Forward Current IFM Gate to Emitter Voltage Continuous . VGES Gate to Emitter Voltage Pulsed . . . VGEM Switching Safe Operating Area at TJ = 15 […]
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