G4PH40UD PDF Datasheet – 1200V, IGBT – IRG4PH40UD

This post explains for the IGBT.

The Part Number is IRG4PH40UD, G4PH40UD.

The function of this semiconductor is 1200V, 41A, IGBT.

The package is TO-247AC Type

Manufacturer: International Rectifier

Preview images :

1 page
igbt G4PH40UD pdf

Description

G4PH40UD is 1200V, 41A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard

 

2 page
G4PH40UD datasheet pinout

Benefits

• Higher switching frequency capability than competitive IGBTs

• Highest efficiency available

• HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require
less/no snubbing

G4PH40UD PDF Datasheet

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G4PF50WD PDF Datasheet – N-Ch, 900V, 51A, IGBT

This post explains for the IGBT.

The Full Part Number is G4PF50WD, IRG4PF50WD.

The package is TO-247AC type.

The function of this semiconductor is 900V, 51A, Insulated-Gate Bipolar Transistor.

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Preview images :

1 page
G4PF50WD pinout igbt

Description

G4PF50WD is 900V, 51A, Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Optimized for use in Welding and Switch-Mode Power Supply applications

2. Industry benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

6. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Benefits :

1. Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz

2. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

 

G4PF50WD pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 900 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 51 A

4. Collector dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PF50WD PDF Datasheet

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