Function : 880nM, 10V, 5mm, Metal NPN Silicon Phototransistor, LED Diode
Body Size : 7mm x 5mm
Manufacturers : ETC
This is a metal encapsulated silicon phototransistor for applications that require light sensing. The phototransistor is useful for building infrared sensors that can detect white or black. The operation of these sensors is based on the emission of IR light by an LED and its mirroring or absorption by white or black surfaces. This is a metal encapsulated silicon phototransistor for applications that require light sensing.
1. Material : Silicon tube 2. Structure : NPN 3. Maximum operating voltage : 10V 4. Reverse Breakdown Voltage : 15V 5. Current with closed transistor : 0.3µA 6. Current with open transistor : 0.5mA – 1mA 7. Power : 30mW 8. Length of wave : 880nm (IR). 9. External Materia l: Metal 10. Weight : 3g
The MCE-3L4N-002 is a high performance InGaAsP surface emitting LED that offers high coupling powers in 1310 nm fiber optic transmission applications. Data rates can vary from DC to 115 MHz depending upon component application. This product is designed for optical fiber communication and other applications. As the drive current varies about the component’s threshold, the optical output increases proportionally.
1. InGaAsP Surface Emitting LED 2. 115 MHz operating bandwidth 3. High speed 1310 nm LED 4. TO-46 packaging with no glass cap
Absolute Maximum Ratings (Tc = 25°C)
1. Reverse Voltage : VR = 2 V 2. Forward Current : IF = 150 mA 3. Operating case temperature : Top = – 40 to +85 °C 4. Storage temperature : Tstg = – 40 to +85 °C