25P16VP Datasheet PDF – 16 Mbit, Serial Flash Memory

Part Number : 25P16VP, M25P16-VMN6P

Function : Serial Flash Embedded Memory

Package : SOP 8 Pin

Manufacturers : Micron Technology, STMicroelectronics

Image :

25P16VP

M25P16-VMN6P is marked 25P16VP.

Description :

The M25P16 is an 16Mb (2Mb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus. The device supports high-performance commands for clock frequency up to 75MHz. The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM command. It is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. Memory can be viewed either as 8,192 pages or as 2,097,152 bytes. The entire memory can be erased using the BULK ERASE command, or it can be erased one sector at a time using the SECTOR ERASE command. This datasheet details the functionality of the M25P16 device based on 110nm process.

Pinout :

25P16VP

Features :

1. SPI bus compatible serial interface
2. 16Mb Flash memory
3. 75 MHz clock frequency (maximum)
4. 2.7V to 3.6V single supply voltage
5. Page program (up to 256 bytes) in 0.64ms (TYP)

Ordering Information

M25P16-VMN6P PDF

25P16VP Datasheet, M25P16-VMN6P Datasheet

25P16VP Datasheet

 

25P16VP pdf

K9HBG08U1M Datasheet PDF – 32G-bit NAND Flash Memory

Part Number : K9HBG08U1M

Function : 4GBx8, 32G-bit NAND Flash Memory

Package : TSOP 48 Pin, TLGA 52 Pin Type

Type : MLC Type

Manufacturers : Samsung

Image :

K9HBG08U1M datasheet

Description :

The K9LAG08U0M is a 32G-bit NAND Flash Memory

Offered in 4Gx8bit, the K9LAG08U0M is a 32G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns(K9MCG08U5M:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.

The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LAG08U0M′s extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9LAG08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.

 

Features :

1. Voltage Supply : 2.7 V ~ 3.6 V

2. Organization
(1) Memory Cell Array : (2G + 64M)bit x 8bit
(2) Data Register : (2K + 64)bit x8bit

3. Automatic Program and Erase
(1) Page Program : (2K + 64)Byte
(2) Block Erase : (256K + 8K)Byte

Other data sheets within the file :

K9HBG08U1M-I, K9LAG08U0M-P, K9MCG08U5M-P

 

K9HBG08U1M Datasheet PDF Download


K9HBG08U1M pdf