K5L5563CAA-D770 Datasheet – 256Mbit NOR Flash Memory

Part Number : K5L5563CAA-D770, K5L5563CAA

Function : Memory 256M ( 16M x 16) MCP

Package :  84 BGA Type ( 8mmx 11.6mmx 1.0mm )

Manufacturers : Samsung

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K5L5563CAA-D770 datasheet

Description :

The K5L5563CAA-D770 is a Multi Chip Package Memory which combines 256Mbit NOR Flash Memory and 64Mbit page UtRAM. The 256Mb NOR Flash featuring single 3.0V power supply, is an 256Mbit NOR-type Flash Memory organized as 16Mx16. The memory architecture of the device is designed to divide its memory arrays into 134 blocks with independent hardware protection.

190BA1 + H05OT-2028C V1.63p H05OT-2028B ok.

K5L5563CAA-D770 pinout memory


1. NOR Flash

(1) Single Voltage, 2.7V to 3.1V for Read and Wirte operations
(2) Organization : 16M x 16bit ( Word mode Only )
(3) Fast Read Access Time : 70ns

2. UtRAM

(1) Process technology : CMOS
(2) Organization : 4M x 16bit
(3) Power supply voltage : 2.7V ~ 3.1 V
(4) 4-Page Read
(5) Three state outputs

Block Diagram

K5L5563CAA Block Diagram

Reference PDF : http://www.elhof.de/Files/Devicelisten/Minato/DL_M1950.pdf

K5L5563CAA-D770 Datasheet

K5L5563CAA-D770 pdf

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H26M11001BAR Datasheet PDF – 1GB e-NAND Memory

Part Number : H26M11001BAR

Function : 1GB e-NAND Memory

Package :  169-FBGA (12x16x1.3) Type

Manufactures : Hynix


H26M11001BAR datasheet


The Hynix e-NAND Module is a very small, flash storage device, designed specifically for storage applications that put a premium on small form factor, low power and low cost. Flash is the ideal storage medium for portable, battery-powered devices. It features lowpower consumption and is non-volatile, requiring no power to maintain the stored data. It also has a wide operating range for temperature, shock and vibration.e-NAND is well-suited to meet the needs of small, low power, electronic devices. e-NAND is expected to be used in a wide variety of portable devices like mobile
phones, PMP, Smart phones, PDA, Media Players and etc.


H26M11001BAR pinout


1. JEDEC JESD84 V4.3 compatible
2. Backward compatible with earlier JESD84
3. Maximum data rate with up to 52MB/sec interface speed ( using 8 parallel data lines )
4. e-NAND supported clock frequencies 0~20MHz, 0~26MHz, 0~52MHz
5. e-NAND support for three different data bus width modes: 1bit(default), 4bit and 8 bit
6. Correction of memory field errors
7. Simple erase mechanism
8. Password Protection of e-NAND

Other data sheets within the file : H26M11001

H26M11001BAR Datasheet PDF

H26M11001BAR pdf