7N60B Datasheet – 600V, 7A, N-Ch, MOSFET (Transistor)

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : 7N60B

Function : 600V, N-Channel MOSFET (Transistor)

Package : TO-220 Type

Manufactures : Chongqing Pingwei , Fairchild

Images :

7N60B datasheet transistor

Description :

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies


7N60B Pinout

7N60B mosfet pinout


1. 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
2. Low gate charge ( typical 38 nC)
3. Low Crss ( typical 23 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. TO-220F package isolation = 4.0kV


Other data sheets within the file : SSP7N60B

7N60B Datasheet


IRF9540N Datasheet – P-Ch, (-)100V, MOSFET (Transistor)

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : IRF9540N, F9540N

Function : Vdss = -100V, HEXFET Power MOSFET ( Transistor )

Package : TO-220AB Type

Manufactures : IR ( International Rectifier ), Infineon ( https://www.infineon.com/ )


IRF9540N mosfet datasheet


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.



IRF9540N pinout circuit


1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. P-Channel
6. Fully Avalanche Rated

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings (Tc = 25°C)

1. Gate to source voltage : VGSS = ± 20 V
2. Drain current : ID = – 23 A
4. Drain power dissipation : PD = 140 W
5. Single pulse avalanche energy : Eas = 430 mJ
6. Avalanche curren : Iar = -11 A
7. Repetitive avalanche energy : Ear = 14 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +175 °C


IRF9540N Datasheet