The QN3109 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The device meet the RoHS and Green Product requirement with full function reliability approved
1. Advanced high cell density Trench technology 2. Super Low Gate Charge 3. Green Device Available
1. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA 2. Networking DC-DC Power System 3. Load Switch
SVF12N60F / SVF12N60S / SVF12N60K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
1. Drain-Source Voltage : VDS = 600 V 2. Gate-Source Voltage : VGS = ±30 V 3. Drain Current : ID = 12 A 4. Drain Current Pulsed : IDM = 48 A 5. Power Dissipation : Pd = 51 W 6. Operation Junction Temperature Range : TJ = -55～+150 °C 7. Storage Temperature Range : Tstg = -55～+150 °C
Other data sheets within the file : SVF12N60, SVF12N60S, SVF12N60K