QN3109 Datasheet – 30V, 154A, N-Channel MOSFET

Part Number : QN3109

Function : N-Channel 30V Fast Switching MOSFET

Package : PRPAK 5×6 Pin Type

Manufactures : UBIQ Semiconductor

Image

QN3109 datasheet mosfet

Description

The QN3109 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The device meet the RoHS and Green Product requirement with full function reliability approved

Pinout

QN3109 pinout

Features

1. Advanced high cell density Trench technology
2. Super Low Gate Charge
3. Green Device Available

Applications

1. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
2. Networking DC-DC Power System
3. Load Switch

Other data sheets within the file : QN3109M6N

QN3109 Datasheet PDF

QN3109 pdf

SVF12N60F Datasheet PDF – 600V, 12A, N-Channel MOSFET

Part Number : SVF12N60F

Function : 12A, 600V, N-Channel MOSFET

Package :  TO-220F-3L Pin Type

Manufactures : Silan Microelectronics

Image

SVF12N60F datasheet mosfet
Description

SVF12N60F / SVF12N60S / SVF12N60K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Pinout

SVF12N60F pinout
Features

1. 12A, 600V, RDS(on)(typ)=0.58Ω @VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

Absolute maximum ratings ( Tc=25°C )

1. Drain-Source Voltage : VDS = 600 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : ID = 12 A
4. Drain Current Pulsed : IDM = 48 A
5. Power Dissipation : Pd = 51 W
6. Operation Junction Temperature Range : TJ = -55~+150 °C
7. Storage Temperature Range : Tstg = -55~+150 °C

Other data sheets within the file : SVF12N60, SVF12N60S, SVF12N60K

SVF12N60F Datasheet

SVF12N60F pdf