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What is IRF640?

This is a power MOSFET used for switching and amplification applications. It is an N-channel MOSFET with a voltage rating of 200V and a current rating of 9A. The IRF640 has a low on-resistance of 0.40 Ohm, which allows it to handle high power and reduce power loss.

Function: HEXFET Power MOSFET ( VDSS = 200V, ID = 9A )

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

Image and Pinouts:

 

Description

This is HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 9A.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The MOSFET is housed in a TO-220 package, which provides good thermal dissipation and makes it easy to mount on a heatsink. It is suitable for use in various electronic circuits, including power supplies, motor control circuits, and audio amplifiers.

 

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. Fast Switching

4. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 74 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

IRF640 Datasheet PDF Download

What is IRF630?

It has a maximum voltage rating of 200V and a maximum current rating of 9A, and it is designed to operate at high temperatures, making it well-suited for use in industrial and automotive applications.

The IRF630 is a type of power MOSFET transistor commonly used in electronic circuits for switching applications.

Function: HEXFET Power MOSFET ( VDSS = 200V, ID = 9A )

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

Image and Pinouts:

 

Description

This is HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 9.0A.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. 175°C Operating Temperature

4. Fast Switching

5. Fully Avalanche Rated

6. Lead-Free

Advantages

1. It has a low on-resistance, which means it can handle high power and reduce power loss.

2. Its TO-220 package provides good thermal dissipation and makes it easy to mount on a heatsink.

Disadvantages

1. The IRF630 has a relatively high gate capacitance, which may limit
its use in high-frequency switching applications.

2. It is an N-channel MOSFET, which means it requires a positive gate voltage to turn on, making it incompatible with some circuits that require a negative gate voltage.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 74 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

IRF630 Datasheet PDF Download