2SK1158 Datasheet PDF – 500V, 7A, N-Ch, MOSFET

Part Number : 2SK1158

Function : 7A, 500V, Silicon N-Channel MOSFET

Package : TO-220AB Type

Manufacturers : Hitachi ( Renesas Electronics )

Pinouts :

2SK1158 datasheet

 

Description :

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switching regulator, DC-DC converter and motor driver

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ±30 V
3. Drain current : ID = 7 A
4. Drain peak current : ID(pulse) = 28 A
5. Body to drain diode reverse drain current : IDR = 7 A
6. Channel dissipation : Pch = 60 W

Application

1. High speed power switching

Other data sheets within the file : 2SK1157, K1157, K1158

2SK1158 Datasheet PDF Download


2SK1158 pdf

2SK2481 Datasheet PDF – 900V, 4A, N-Ch, MOSFET – NEC

Part Number : 2SK2481

Function : 900V, 4A, N-Channel Power MOSFET

Package : TO-220 Type

Manufacturers : NEC ( Renesas Technology )

Pinouts :

2SK2481 datasheet

 

Description :

The 2SK2481 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Features

1. Low On-Resistance : RDS(on) = 4.0 W (VGS = 10 V, ID = 2.0 A)
2. Low Ciss Ciss = 900 pF TYP.
3. High Avalanche Capability Ratings

Absoulte maximum ratings (Ta = 25 °C)

1. Drain to Source Voltage : VDSS = 900 V
2. Gate to Source Voltage : VGSS = ±30 V
3. Drain Current (DC) : ID(DC) = ±4.0 A
4. Drain Current (pulse) :  ID(pulse) = ±12 A
5. Total Power Dissipation (Tc = 25 °C) : PT1 = 70 W
6. Total Power Dissipation (TA = 25 °C) : PT2 = 1.5 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = – 55 to +150 °C
9. Single Avalanche Current : IAS = 4.0 A
10. Single Avalanche Energy : EAS = 65.9 mJ

Other data sheets within the file : K2481

2SK2481 Datasheet PDF Download


2SK2481 pdf