IRF320 Datasheet PDF – 400V, N-Ch, Power MOSFET

Part Number : IRF320

Function : N-Channel Power MOSFET

Package : TO-3 Pin Type

Manufacturers : Samsung

Image and Pinouts :
IRF320 datasheet

Description :

1. Low Rds(on)
2. Improved Inductiove reuggedness
3. Fast switching times
4. Rugged polusilicon gate cell structure
5. Low Input capacitance
6. Extended safe operating area
7. Improved high temperature reliability

Absolute Maximum Ratings (Ta = 25°C)

Drain to source voltage : VDSS = 400 V
Drain to gate voltage : VDGS = 400 V
Drain current : ID = 3.0 V

Other data sheets within the file : IRF321, IRF322, IRF323

IRF320 Datasheet PDF Download

IRF320 pdf

IRC630 Datasheet – Power MOSFET(200V/0.40ohm/9.0A)

This post explains for the semiconductor Power MOSFET.

The Part Number is IRC630. The Package is TO-220 Type

The function of this semiconductor is HEXFET Power MOSFET.

Manufacturers : International Rectifier

Preview images :

IRC630 datasheet transistor

Description :

Third Generation HEXFETs from international Rectifier provide the desinger with the best combination of fast switching, reggedized device design, low on-resistance and cost-effeciveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used of control or protection of the device.


1 page
IRC630 image


1. Dynamic dv/dt Rating
2. Repetitive Avalanche Rated
3. Current Sense
4. Fast Switching
5. Ease of Paralleling
6. Simple Drive Requirements


2 page
IRC630 pinout

IRC630 Datasheet