K13A60D PDF Datasheet – 600V, 13A, MOSFET, TK13A60D

This post explains for the MOSFET.

The Part Number is K13A60D, TK13A60D.

The function of this semiconductor is 600V, 13A, N-Channel MOSFET.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

K13A60D Datasheet

 

Description

K13A60D is 600V, 13A, Silicon N-Channel MOS Type Field Effect Transistor.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) […]

K13A60D pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Drain Power Dissipation: Pd = 50 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

K13A60D PDF Datasheet

P1403EVG PDF Datasheet – P-Ch, 30V, 11A, MOSFET

This post explains for the MOSFET.

The Part Number is P1403EVG.

The function of this semiconductor is -30V, -11A, P-Channel MOSFET.

The package is SOP-8 Pin Type

Manufacturer: NIKO-SEM

Preview images :

Description

The P1403EVG is -30V, -11A, P-Channel Logic Level Enhancement Mode Field Effect Transistor.

A P-channel Enhancement-Mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of field-effect transistor with P-channel conductivity. This means it uses positively charged carriers (holes) to conduct electrical current.

Enhancement-Mode MOSFETs are typically voltage-controlled devices, and they are called “enhancement-mode” because they require a positive voltage applied to the gate terminal to enhance or enable the flow of current between the source and drain terminals.

Pinouts

P1403EVG pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 30V

2. Gate to source voltage: VGSS = ± 25V

3. Drain current: ID = – 11 A

4. Drain Power Dissipation: Pd = 2.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

P1403EVG datasheet mosfet

In a P-Channel MOSFET, a thin layer of oxide is grown on the surface of the p-type substrate, and a metal gate is deposited on top of the oxide.

The gate is separated from the substrate by the oxide layer and is electrically insulated from the substrate.

The gate is used to control the flow of current between the source and the drain terminals of the MOSFET.

P1403EVG PDF Datasheet