P3055LDG PDF Datasheet – 25V, 12A, N-Ch, MOSFET

Part Number: P3055LDG

Function: 25V, 12A, N-Channel Mode Field Effect Transistor

Package: TO-252 Type

Manufacturer: Niko

Images:

1 page
P3055LDG mosfet datasheet
1. GATE 2. DRAIN 3. SOURCE

Description

P3055LDG is N-Channel Logic Level Enhancement Mode Field Effect Transistor.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 12 A

4. Total Power Dissipation: Pd = 48 W

5. Avalanche energy: Eas = 60 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

 

3 page
P3055LDG pdf equivalent

P3055LDG PDF Datasheet

Posts related to ‘ MOSFET

Part number Description
W60N10 100V, 60A, N-Ch, MOSFET – ST
2N03L04 30V, 80A, Power Transistor, MOSFET
K2529 N-Ch, 60V, 50A, MOSFET, Transistor
K1413 1500V, 2A, N-Channel, MOSFET – Sanyo
D1703L N-Ch, 30V, 17A, MOSFET, STD1703L
83T03GH-HF 83T03GH-HF PDF – 30V, 75A, MOSFET – AP83T03GH-HF
GWM100-01X1 N-Ch, 100V, 90A, MOSFET
FQA12N60 600V, 12A, N-Ch, MOSFET, Transistor
K1891 N-Ch, 30V, 35A, MOSFET, Transistor
SPP04N60C3 650V, 4.5A, MOSFET – Infineon

 

K4A60DA PDF Datasheet – 600V, 3.5A, N-Ch, MOSFET

Part Number: K4A60DA, TK4A60DA

Function: 600V, 3.5A, N-Channel, MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:

1 page
transistor K4A60DA pdf datasheet

Description

K4A60DA is 600V, 3.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

Features

1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.5 A

4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

3 page
mosfet K4A60DA equivalent

Applications:

1. Switching Regulator

 

K4A60DA PDF Datasheet

Posts related to ‘ MOSFET

Part number Description
K11A60D 600V, 11A, MOSFET – TK11A60D
4407A AO4407A (30V, P-Ch, MOSFET)
2SK2373 2SK2373 MOSFET – 30V, 0.2A, Transistor ( Datasheet PDF )
60T03GP 30V, 45A, MOSFET, Transistor
APM2518NU APM2518NU PDF – 25V, 50A, N-Channel Mode MOSFET
K7A60W 600V, 7A, N-ch, MOSFET, TK7A60W
K1923 MOSFET, 600V, 4A, Transistor, TO-220AB
MOSFET 30V, 50A, SinoPower ( PDF )
IRFP460 500V, 20A, Power MOSFET – IXYS
2SK3061 N-Ch, 60V, 70A, MOSFET