10N60 Datasheet – 600V, 10A, N-ch, MOSFET ( PDF )

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : 10N60, FQPF10N60, FQPF10N60C

Function : N-Channel Power MOSFET ( 600V,10A )

Package : TO-220, TO-220F Type

Manufactures : Nell Semiconductor, Fairchild

This post explains for the transistor 10N60.


10N60 MOSFET Transistor


This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.



10N60 pinout datasheet

Features :

1. RDS(ON) = 0.8Ω@VGS = 10V

2. Ultra low gate charge(57nC max.)

3. Low reverse transfer capacitance (CRSS = 18pF typical)

4. Fast switching capability

5. 100% avalanche energy specified

6. Improved dv/dt capability

7. 150°C operation temperature

10N60 Datasheet




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20N60A4D Datasheet – 600V, 70A, N-channel IGBT ( PDF )

This is one of the transistor types.

The IGBT is insulated-gate bipolar transistor.

Part Number : 20N60A4D, HGTG20N60A4D

Function : 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Package : TO-247 Type

Manufactures : Fairchild


20N60A4D image


The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 °C and 150 °C.  The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.

20N60A4D Pinout

20N60A4D datasheet pinout


• >100kHz Operation At 390V, 20A

• 200kHz Operation At 390V, 12A

• 600V Switching SOA Capability

• Low Conduction Loss

20N60A4D Datasheet


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