These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Other data sheets within the file : 6N60C, FQP6N60C, FQPF6N60C
1. Drain to source voltage : VDSS = 500 V 2. Drain current : ID = 6 A 3. Drain peak current : ID(pulse) = 24 A 4. Body to drain diode reverse drain current : IDR = 6 A 5. Gate to source voltage : VGSS = ± 20 V 6. Power dissipation : Pd = 80 W 7. Channel temperature : Tch = 150 °C 8. Storage temperature : Tstg = -55 ~ +150 °C