IRLB4132 Datasheet – HEXFET Power MOSFET – IRF

Part Number : IRLB4132

Description : HEXFET Power MOSFET

Package : TO-220 Type

Manufactures : IRF ( http://www.irf.com )

Image :

IRLB4132 image

Features

1. With low gate drive requirements
2. Easy to drive ·100% avalanche tested
3. Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

1. Optimized for UPS/Inverter Applications
2. Low Voltage Power Tools

Benefits

1. Best in Class Performance for UPS/Inverter
2. Very Low RDS(on) at 4.5V VGS
3. Ultra-Low Gate Impedance
4. Fully Characterized Avalanche Voltageand Current
5. Lead-Free

Pinouts :

IRLB4132 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 150 A
4. Drain power dissipation : PD = 140 W
8. Channel temperature : Tj = -55 ~ 175 °C
9. Storage temperature : Tstg = -55 to +175 °C

IRLB4132 Datasheet

 

RJP30H1 Datasheet PDF – N Channel IGBT – Renesas

Part Number : RJP30H1, RJP30H1DPD-00-J2

Function : N-Channel Power MOSFET

Package : TO-263 Type

Manufacturers : Renesas Electronics

Image

rjp30h1-mosfet

 

Description :

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 µA max.

 

Pinouts :

RJP30H1DPD datasheet

 

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 30 A
4. Collector dissipation : Pc = 40 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C

RJP30H1DPD Datasheet

RJP30H1 Datasheet

RJP30H1DPD pdf