K9GAG08U0E Datasheet – 16Gb NAND Flash Memory

This post explains for the NAND Flash Memory K9GAG08U0E.

The Part Number is K9GAG08U0E.

The Pacakge : TSOP 48 Pin Type

The function of this semiconductor is 16Gb E-die NAND Flash.

Manufacturers : Samsung

Images :

K9GAG08U0E datasheet flash memory

Description :

The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 1.2ms on the 8,628-byte page and an erase operation can be performed in typical 1.5ms on a (1M+54.5K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.

The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9GAG08U0E′s extended reliability of P/E cycles which are presented in the Qualification report by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9GAG08U0E is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. […]

Pinout

K9GAG08U0E pinout samsung

Features

• Voltage Supply
– 3.3V Device : 2.7V ~ 3.6V
• Organization
– Memory Cell Array : (2,076M x 110.49K) x 8bit
– Data Register : (8K + 436) x 8bit
• Automatic Program and Erase
– Page Program : (8K + 436)Byte
– Block Erase : (1M + 54.5K)Byte
• Page Read Operation
– Page Size : (8K + 436)Byte
– Random Read : 400μs(Max.)
– Serial Access : 30ns(Min.)
• Memory Cell : 2bit / Memory Cell
• Fast Write Cycle Time
– Program time : 1.2ms(Typ.)
– Block Erase Time : 1.5ms(Typ.)

K9GAG08U0E Datasheet

H27UCG8T2ETR Datasheet – 64Gb MLC NAND Flash Memory

Part Number : H27UCG8T2ETR

Function : 64Gbit(8192M x 8bit) Legacy NAND Flash Memory

Package : TSOP 48 Pin ( 12mm x 20mm x 1.2mm )

Manufactures : Hynix

Image

H27UCG8T2ETR datasheet NAND Flash Memory

Description

The product part NO. H27UCG8T2ATR-BC is a single 3.3V 64Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 2090 blocks. Each block consists of 256 programmable pages. Each page contains 8,832bytes. The pages are subdivided into an 8,192byte main data storage area with a spare 640byte district. Page program operation can be performed in typical 1500us, and a single block can be erased in typical 5ms.

Pinout

H27UCG8T2ETR pinout

Product Feature

■ Multi Level Cell (MLC) Technology
■ Power Supply Voltage
– VCC / VCCq= 2.7V ~ 3.6V
■ Organization
– Page Size : 8192 + 640(Spare) bytes
– Block Size : 2M + 160K bytes, 256pages
– Plane Size : 2048 + 42(Extended) blocks
– Device Size : 4096 + 84(Extended) blocks
■ Page Read Time
– Random Read Time (tR) : 60/80us(Typ./Max)
– Sequential Access (tRC/tWC) : 16ns(Min.)
■ Page Write Time
– Page Program Time : 1500(Typ.)
■ Block Erase Time
– Block Erase Time : 5.0ms(Typ.)
■ Hardware Data Protection
– Program/Erase locked during power transitions

 

H27UCG8T2ETR Datasheet