C1815 Datasheet – Vcbo=60V, NPN Transistor – Toshiba

Part Number : C1815

Description : Silicon NPN Epitaxail Type Transistor

Package : TO-92 Type

Manufactures : Toshiba Semiconductor

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C1815 image

Applications

1. Audio Frequency General Purpose Amplifier
2. Driver Stage Amplifier

Features

1.  High voltage and high current: VCEO= 50 V (min), IC= 150 mA (max)
2.  Excellent hFElinearity :
(1) hFE (2)= 100 (typ.)  at VCE= 6 V, IC= 150 mA
(2) hFE(IC= 0.1 mA)/hFE(IC= 2 mA)  = 0.95 (typ.)
3.  Low noise: NF = 1dB (typ.) at f = 1 kHz
4.  Complementary to 2SA1015 (O, Y, GR class)

Pinout

C1815 Datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V
2. Collector to Emitter Voltage : Vceo = 50 V
3. Emitter to Base Voltage : Vebo = 5 V
4. Collector Current : Ic = 150 mA
5. Total Dissipation : Pc = 400 mW
6. Junction Temperature : Tj = 125°C
7. Storage Temperatue : Tsg = -55 ~ +150°C

C1815 Datasheet

 

D998 Datasheet – Vcbo = 120V, 10A, NPN Transistor – KEC

Part Number : D998

Function : 10A, 120V, TRIPLE DIFFUSED NPN TRANSISTOR

Package : TO-3P(H)IS Type

Manufacturers : KEC

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D998 datasheet

Description

1. High Power Amplifier Application
2. Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage.
3. Complementary to KTB778.
4. Complement to type 2SB778

Pinouts for D998

D998 transistor

Maximum Rating ( Ta = 25’C )

1. Collector-Base Voltage : Vcbo = 120V
2. Collector-Emitter Voltage : Vceo = 120V
3. Emiiter-Base Voltage : Vebo = 5V
4. Collector Current : Ic = 10A
5. Base Current : Ib = 1.0A
6. Collector Power Dissipation : Pc = 80W
7. Junction Temperature : Tj = 150°C
8. Storage Temperatue : Tsg = -55 ~ +150°C

Other data sheets within the file : KTD998, 2SB778

D998 Datasheet

D998 pdf