J512 Datasheet PDF – 250V, P-Channel MOSFET

Part Number : J512

Function : -250V, P-Channel MOSFET Transistor

Package : TO-220, SC-67 Pin Type

Manufacturers : Toshiba

Images :

J512 datasheet mosfet

Description :

1. Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 3.7 S (typ.)
3. Low leakage current : IDSS = −100 μA (max) (VDS = −250 V)
4. Enhancement−mode : Vth = −1.5~−3.5 V (VDS = −10 V, ID = −1 mA)

Pinout :

J512 pinout transistor

Absolute maximum ratings ( Ta=25°C)

1. Drain-source voltage : VDSS = -250 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = -250 V
3. Gate-source voltage : VGSS = ±20 V
4. Drain current (DC) : ID = -5 A
5. Drain power dissipation (Tc = 25°C) : PD = 30 W
6. Single pulse avalanche energy : EAS = 155 mJ
7. Avalanche current : IAR = -5 A
6. Repetitive avalenche energy : EAR = 3.0 mJ
7. Channel temperature : Tch = 150 °C
8. Storage temperature range : Tstg = -55~150 °C

Applications

1. Chopper Regulator
2. DC−DC Converter and Motor Drive

Other data sheets within the file : 2SJ512

J512 Datasheet PDF

 

J512 pdf

2SJ334 Datasheet PDF – 60V, 30A, P-Ch, MOSFET – Toshiba

Part Number : 2SJ334

Function : -30A, -60V, P-CHANNEL MOSFET Transistor

Package : TO-220 Type

Manufacturers : Toshiba

Pinouts :

2SJ334 datasheet

Description :

TOSHIBA Field Effect Transistor, Silicon P Channel MOS Type

Absolute maximum ratings ( Ta=25°C )

1. Drain−source voltage : VDSS = -60 V
2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = -60 V
3. Gate−source voltage : VGSS = ±20 V
4. Drain current : ID = -30 A
5. Drain power dissipation (Tc = 25°C) : PD = 45 W
6. Single pulse avalanche energy : EAS = 936 mJ
7. Avalanche current : IAR = -30 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
6. Channel Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C

 

Applications

1. HIGH SPEED
2. HIGH CURRENT SWITCHING
3. DC-DC CONVERTER
4. RELAY DRIVE AND MOTOR DRIVE

Other data sheets within the file : J334

2SJ334 Datasheet PDF Download


2SJ334 pdf