TPC8107 Datasheet – (-)30V, P-ch, MOSFET – Toshiba

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : TPC8107

Function : Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Package : SOP 8 Pin type

Manufactures : Toshiba Semiconductor

See the preview image and the PDF file for more information.

Image

tpc8107-mosfet

Features

1. Small footprint due to small and thin package
2. Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
3. High forward transfer admittance: |Yfs| = 31 S (typ.)
4. Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
5. Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

 

TPC8107 Pinout

tpc8107-datasheet-pinout

Applications

1. Lithium Ion Battery Applications
2. Notebook PC Applications
3. Portable Equipment Applications

 

Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = -30 V
2. Drain-gate voltage (RGS  20 k) : VDGR = -30 V
3. Gate-source voltage : VGSS = +-20 V
4.  Drain power dissipation (t  10 s) : PD = 1.9 W

 

TPC8107 Datasheet

 

4435 Datasheet – 30V P-Channel MOSFET – AO4435

Part Number : 4435, AO4435

Function : 30V P-Channel MOSFET

Package : SO 8 Pin

Manufactures : Alpha & Omega Semiconductor

Image

4435-AO4435-mosfet

( 4435 SMD )

Description

The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable foruse as a load switch or in PWM applications.

1. RoHS Compliant
2. AO4435 is Halogen Free

 

Pinout

4435 datasheet pinout ao4435

 

Product Summary

1. VDS = -30V

2. ID = -10.5A (V GS = -20V)

3. RDS(ON)< 14mΩ(VGS= -20V)

4. RDS(ON)< 18mΩ(VGS= -10V)

5. RDS(ON)< 36mΩ(VGS= -5V)

 

 

Official Homepage : http://www.aosmd.com/products/mosfets/p-channel/AO4435

 

4435 Datasheet

 

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