2SA814 Datasheet – Silicon PNP Transistor – Toshiba

Part Number : 2SA814

Function : Silicon PNP Epitaxial Base Mesa Tyep Transistor

Package : TO-220AB Type

Manufacturers : Toshiba

Pinouts :

2SA814 datasheet

 

Description :

1. High Breakdown Voltage : Vceo = -120V (2SA814),    V eo = -100V (2SA815)
2. Complementary to 2SC1624 and 2SC1625.

Maximum Ratings

1. Collector-Base Voltage : Vcbo = -120 V
2. Collector-Emitter Voltage : Vceo = -120V
3. Emitter-Base Voltage : Vebo = -5V
4. Collector Current : Ic = -1A
5. Emitter Current : Ie = 1A
6. Collector Power Dissipation : Pc = 15W

Applications

1. Medium Power Amplifier Applications
2. Driver Stage Amplifier Applications

Other data sheets within the file : 2SA815, A814, A815

2SA814 Datasheet PDF

2SA814 pdf

 

PN2907A Datasheet PDF – 60V, PNP Transistor – Fairchild

Part Number : PN2907A

Function : 60V, PNP General-Purpose Translator

Package : TO-92 Type

Manufacturers : Fairchild Semiconductor

Pinouts :

PN2907A datasheet

Description :

The 2907A, PN2907A, MMBT2907A, and PZT2907A are 60V PNP bipolar transistors designed for use as a general purpose amplifier or switch in allications that require up to 500mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.

Features

1. High DC Current Gain (hFE) Range : 100 ~ 300
2. High-Current Gain Bandwidth Product (fT) : 200 MHz (Minimum)
3. Maximum Turn-On Time (ton) : 45 ns
4. Maximum Turn-Off Time (toff) : 100 ns

Applications

1. General-Purpose Amplifier
2. Switch

Other data sheets within the file : 2907A, MMBT2907A, MMBT2907A_D87Z, PN2907A, PN2907ABU

PN2907A Datasheet PDF Download

PN2907A pdf