This post explains for the transistor 2SA965.

The Part Number is A965.

The function of this semiconductor is PNP Transistor.

The package is TO-92MOD Type

Manufacturer: Toshiba Semiconductor

Preview images :

Description

A965 is 120V, 800mA, PNP Transistor. Complementary to 2SC2235.

A PNP transistor is one of the semiconductor components used in electrical engineering and electronic circuit design, belonging to the Bipolar Junction Transistor (BJT) family. The PNP transistor consists of three layers of semiconductor material: P-type, N-type, and P-type, each with different charges. The name PNP transistor stands for “Positive-Negative-Positive,” reflecting the characteristics of these three semiconductor layers.

PNP transistors comprise the following key components:

1. Emitter: The emitter is the first layer and is made of P-type semiconductor material. The emitter serves as the primary source of current.

2. Base: The base is the second layer and is made of N-type semiconductor material. The base controls the current between the emitter and collector.

3. Collector: The collector is the third layer and is made of P-type semiconductor material. The collector collects the current, which flows from the emitter through the base.

PNP transistors control the flow of a large current (collector current) between the emitter and collector using a small current applied to the base (base current). When a base current flows, the PNP transistor permits the flow of electrons from the emitter to the collector, resulting in an increase in collector current. Reducing the base current reduces the collector current. Consequently, PNP transistors are valuable electronic components for controlling large output currents with small input currents.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 120 V

2. Collector to Emitter Voltage: Vceo = – 120 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 800 mA

5. Collector Dissipation : Pc = 900 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Silicon PNP Transistor, Power Amplifier

2. Driver Stage Amplifier

A965 PDF Datasheet

Part Number: A1270

Function: 30V, 500mA, PNP Transistor

Package: TO-92 Type

Manufacturer: SEMTECH

Images:

Description

The A1270 is 30V, 500mA, PNP Silicon Epitaxial Planar Transistor. A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor.

Here are characteristics of PNP transistors:

1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector).

2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.

3. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 35 V

2. Collector to Emitter Voltage: Vceo = – 30 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 500 mA

5. Power Dissipation : Ptot = 500 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

The transistor is subdivided into two groups O and Y according to its DC current gain.

Applications:

1. Switching and general purpose

A1270 PDF Datasheet

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