PNP double transistor in an SC-88; SOT363 plastic package. NPN complement: BC847BS.
Features
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
• No mutual interference between the transistors.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = – 50V
2. Collector to Emitter Voltage : Vceo = – 45V
3. Emitter to Base Voltage : Vebo = – 5V
4. Collector Current : Ic = -100mA
5. Total Dissipation : Ptot = 200mW
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
See the preview image and the PDF file for more information.
Image
Description :
The TIP127 is a silicon PNP Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications.
Features
1. High DC Current Gain: hFE = 2500 (Typ) at IC = 4A
2. Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 100mA
3. Low Collector−Emitter Saturation Voltage:
(1) VCE(sat) = 2.0V (Max) at IC = 3A
(2) VCE(sat) = 4.0V (Max) at IC = 5A
Pinout
Maximum Ratings
1. Collector-Base Voltage : VCBO = 100 V
2. Collector-Emitter Voltage : VCEO = 100V
3. Emitter-Base Voltage : VEBO = 5.0 V
4. Collector Current Continuous : IC = 5.0 A
5. Collector Current Peak : ICM = 8.0 A
6. Base Current : IB = 120 mA
[…]
TIP127 Datasheet
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