2N5401 Transistor – PNP, (-)150V, (-) 600mA, TO-92

What is 2N5401?

This is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It has a maximum collector current rating of 0.6A, a maximum collector-emitter voltage rating of 150V, and a maximum power dissipation rating of 625mW.

Part Number: 2N5401

Function: -150V, -600mA, PNP Silicon Transistor

Package: TO-92 Type

Manufacturer: ISC, NTE, NXP, AuK


2N5401 datasheet



This is General Purpose Si-Epitaxial Planar PNP Transistor. he 2N5401 comes in a TO-92 package and has a low noise figure, making it suitable for use in audio amplifier circuits.

• General purpose amplifier
• High voltage application


• High collector breakdown voltage : VCBO= -160V, VCEO= -160V
• Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
• Complementary pair with 2N5551
• Junction Temperature: Tj = 150°C
• Storage Temperature: Tsg = -55 ~ +150°C

Advantage Vs disadvantage


1. High voltage and current handling capabilities

2. Low noise and distortion for use in audio amplifier circuits

3. Low power dissipation for efficient operation

4. Availability and cost-effectiveness


1. Limited maximum current rating, which makes it unsuitable for high power applications

2. Relatively low maximum frequency rating, which makes it unsuitable for high-speed applications

3. Limited gain bandwidth product, which limits its use in high-frequency amplification circuits


Other data sheets are available within the file: N5401

2N5401 Datasheet PDF Download

2N5401 pdf

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B772P Transistor – PNP, 30V, 3A, TO-126, 2SB772 – NEC

What is B772P?

This is a PNP bipolar junction transistor (BJT) designed for high-speed switching applications.

Part Number: B772P, 2SB772

Function: -30V, -3A, PNP Transistor

Package: TO-126 Type

Manufacturer: NEC


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B772P image


The B772P is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

Advantages Vs Disadvantages


1. High voltage and current capacity

2. Low saturation voltage for efficient switching

3. Complementary NPN transistor available for use in push-pull circuits


1. Relatively low DC current gain compared to other transistors

2. May not be suitable for low power applications due to its high power dissipation rating


• Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)

• Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A)

• Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 40 V
2. Collector to Emitter Voltage: Vceo = – 30 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 3A
5. Collector Dissipation : Pc = 1W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C



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B772P Datasheet

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