PNP

2N5401 Transistor – PNP, (-)150V, (-) 600mA, TO-92

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What is 2N5401?

This is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It has a maximum collector current rating of 0.6A, a maximum collector-emitter voltage rating of 150V, and a maximum power dissipation rating of 625mW.

Part Number: 2N5401

Function: -150V, -600mA, PNP Silicon Transistor

Package: TO-92 Type

Manufacturer: ISC, NTE, NXP, AuK

Pinouts:

2N5401 datasheet

 

Description:

This is General Purpose Si-Epitaxial Planar PNP Transistor. he 2N5401 comes in a TO-92 package and has a low noise figure, making it suitable for use in audio amplifier circuits.

• General purpose amplifier
• High voltage application

Features

• High collector breakdown voltage : VCBO= -160V, VCEO= -160V
• Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
• Complementary pair with 2N5551
• Junction Temperature: Tj = 150°C
• Storage Temperature: Tsg = -55 ~ +150°C

Advantage Vs disadvantage

Advantage:

1. High voltage and current handling capabilities

2. Low noise and distortion for use in audio amplifier circuits

3. Low power dissipation for efficient operation

4. Availability and cost-effectiveness

Disadvantage:

1. Limited maximum current rating, which makes it unsuitable for high power applications

2. Relatively low maximum frequency rating, which makes it unsuitable for high-speed applications

3. Limited gain bandwidth product, which limits its use in high-frequency amplification circuits

 

Other data sheets are available within the file: N5401

2N5401 Datasheet PDF Download


2N5401 pdf

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B772P Transistor – PNP, 30V, 3A, TO-126, 2SB772 – NEC

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What is B772P?

This is a PNP bipolar junction transistor (BJT) designed for high-speed switching applications.

Part Number: B772P, 2SB772

Function: -30V, -3A, PNP Transistor

Package: TO-126 Type

Manufacturer: NEC

Images:

1 page
B772P image

Description:

The B772P is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

Advantages Vs Disadvantages

Advantages:

1. High voltage and current capacity

2. Low saturation voltage for efficient switching

3. Complementary NPN transistor available for use in push-pull circuits

Disadvantages:

1. Relatively low DC current gain compared to other transistors

2. May not be suitable for low power applications due to its high power dissipation rating

Features:

• Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)

• Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A)

• Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 40 V
2. Collector to Emitter Voltage: Vceo = – 30 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 3A
5. Collector Dissipation : Pc = 1W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

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pinout

B772P Datasheet

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