This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. The device is suitable for applications with low gate charge driving or ultra low on resistance requirements.
Absolute Maximum Ratings ( Ta=25°C )
1. Drain to source voltage : Vdss = 20 V 2. Gate to source voltage : Vgss = ± 10 V 3. Drain Current (DC) : Id = 3.5 A 4. Drain Current (Pulse) : Idp = 14 A 5. Allowable Power Dissipation : Pd = 0.8 W