K6T4008U1C-GB10 Datasheet PDF – 512Kx8 bit, Static RAM

Part Number : K6T4008U1C-GB10

Function : 512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Package : SOP 32 Type

Manufacturers : Samsung

Pinouts :
K6T4008U1C-GB10 datasheet

Description :

The K6T4008V1C and K6T4008U1C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

Block Diagram

Features

`. Process Technology: TFT
2. Organization: 512K x 8
3. Power Supply Voltage
(1) K6T4008V1C Family: 3.0~3.6V
(2) K6T4008U1C Family: 2.7~3.3V
4. Low Data Retention Voltage: 2V(Min)
5. Three state output and TTL Compatible

Other data sheets within the file : K6T4008U1C-B, K6T4008U1C-F, K6T4008U1C,

K6T4008U1C-GB70, K6T4008U1C-GB85

K6T4008V1C-GB70
K6T4008V1C-GB85
K6T4008V1C-VB70
K6T4008V1C-VB85
K6T4008V1C-MB70
K6T4008V1C-MB85
K6T4008V1C-TB70
K6T4008V1C-TB85
K6T4008V1C-YB70
K6T4008V1C-YB85
K6T4008U1C-GB70
K6T4008U1C-GB85
K6T4008U1C-GB10
K6T4008U1C-VB70
K6T4008U1C-VB85
K6T4008U1C-VB10
K6T4008U1C-MB70
K6T4008U1C-MB85
K6T4008U1C-MB10
K6T4008U1C-TB70
K6T4008U1C-TB85
K6T4008U1C-TB10
K6T4008U1C-YB70
K6T4008U1C-YB85
K6T4008U1C-YB10

K6T4008U1C-GB10 Datasheet PDF Download

K6T4008U1C-GB10 pdf

 

STK11C48-N25I Datasheet PDF – 2K x 8 Static RAM – Simtek

Part Number : STK11C48-N25I

Function : 2K x 8 nv SRAM CMOS nonvolatile static RAM

Package : 28-Pin 300 mil PDIP, 300 mil SOIC and 350 mil SOIC

Manufacturers : Simtek Corporation

Pinouts :

STK11C48-N25I datasheet

Description :

The Simtek STK11C48 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAMcan be read and written an unlimited number of times,while independent, nonvolatile data resides in the Nonvolatile Elements. Data transfers from the SRAMto the Nonvolatile Elements (the STORE operation), or from Nonvolatile Elements to SRAM(the  RECALL operation), take place using a software sequence. Transfers from the Nonvolatile Elements to the SRAM(the  RECALL operation) also take place automatically on restoration of power.

Block Diagram

Features

1. 25ns, 35ns and 45ns Access Times
2. STORE to Nonvolatile Elements Initiated by Software
3. RECALL to SRAM Initiated by Software or Power Restore
4. 10mA Typical ICC at 200ns Cycle Time
5. Unlimited READ, WRITE and RECALL Cycles

Other data sheets within the file :

STK11C48, STK11C48-N20, STK11C48-N25, STK11C48-N25I, STK11C48-P35I

STK11C48-N25I Datasheet PDF Download


STK11C48-N25I pdf