MT41J64M16LA-187 Datasheet – 8 Meg x 16, DDR3 SDRAM

Part Number : MT41J64M16LA-187

Function : 8 Meg x 16 x 8 Banks, DDR3 SDRAM

Package : 96-FBGA Package

Manufacturers : Micron Technology

Images

MT41J64M16LA-187 datasheet sdram

Description

The DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clockcycle data transfers at the I/O pins.

Features

1. VDD = VDDQ = +1.5V ±0.075V
2. 1.5V center-terminated push/pull I/O
3. Differential bidirectional data strobe
4. 8n-bit prefetch architecture
5. Differential clock inputs (CK, CK#)
6. 8 internal banks
7. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

Options

1. Configuration
(1) 256 Meg x 4 256M4
(2) 128 Meg x 8 128M8
(3) 64 Meg x 16 64M16

4. FBGA package (Pb-free) – x4, x8
(1) 78-ball FBGA (8mm x 11.5mm) Rev. F JP
(2) 78-ball FBGA (9mm x 11.5mm) Rev. D HX
(3) 86-ball FBGA (9mm x 15.5mm) Rev. B BY

Other data sheets within the file : MT41J64M16LA-187E, MT41J64M16LA-187E:B

MT41J64M16LA-187 Datasheet PDF

K4B4G1646B Datasheet PDF – 4Gb DDR3 SDRAM – Samsung

Part Number : K4B4G1646B

Function : 4Gb B-die DDR3 SDRAM ( 256Mx16 )

Package : 96FBGA Type

Manufacturers : Samsung

Image :
K4B4G1646B datasheet

Description :

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .

Features

1. JEDEC standard 1.5V(1.425V~1.575V)
2. VDDQ = 1.5V(1.425V~1.575V)
3. Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13,14
4. Programmable Additive Latency: 0, CL-2 or CL-1 clock
5. 8-bit pre-fetch
6. Bi-directional Differential Data-Strobe
7. Asynchronous Reset

Other data sheets within the file : K4B4G1646B-HCF8, K4B4G1646B-HCH9, K4B4G1646B-HCK0

K4B4G1646B Datasheet PDF Download

K4B4G1646B pdf