93C46WP PDF – 3-Wire Serial EEPROM

Part Number : 93C46WP

Function : 3-Wire Serial EEPROM

Package : SOP 8 Pin Type

Manufactures : FMD, ST

Images :

93C46WP pdf datasheet

User Selectable Internal Organization:

1. FT93C46: 128 x 8 or 64 x 16
2. FT93C56: 256 x 8 or 128 x 16
3. FT93C66: 512 x 8 or 256 x 16

Description :

The FT93C46/56/66 series are 1024/2048/4096 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 64/128/256 words of 16 bits each when the ORG pin is connected to VCC (or unconnected) and 128/256/512 words of 8 bits (1 byte) each when the ORG pin is tied to ground. The devices are fabricated with proprietary advanced CMOS process for low power and low voltage applications. These devices are available in standard 8-lead PDIP, 8-lead JEDEC SOIC and 8-lead TSSOP packages. Our extended VCC range (1.8V to 5.5V) devices enables wide spectrum of applications. […]

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Features

1. 2 MHz Clock Rate (5V) Compatibility.
2. Industry Standard 3-wire Serial Interface.
3. Self-Timed ERASE/WRITE Cycles (5ms max including auto-erase).
4. Automatic ERAL before WRAL.
5. Sequential READ Function.
6.  High Reliability: Typical 1 Million Erase/Write Cycle Endurance.

93C46WP Datasheet

93C46WP pdf

 

93C66WP PDF Datasheet – 4Kbit, Serial Access EEPROM

Part Number : 93C66WP

Function : Microwire Serial Access EEPROM

Package : SMD 8 Pin Type

Manufactures : STMicroelectronics

Images :

93C66WP datasheet

Description :

These electrically erasable programmable memory (EEPROM) devices are accessed through a Serial Data Input (D) and Serial Data Output (Q) using the MICROWIRE bus protocol. In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. ECOPACK packages are Lead-free and RoHS compliant.

Pinout

93C66WP pinout

 

Features

1. Industry Standard MICROWIRE Bus
2. Single Supply Voltage:
(1) 4.5 to 5.5V for M93Cx6
(2) 2.5 to 5.5V for M93Cx6-W
(3) 1.8 to 5.5V for M93Cx6-R
3. Dual Organization: by Word (x16) or Byte (x8)
4. Programming Instructions that work on: Byte, Word or Entire Memory
5. Self-timed Programming Cycle with AutoErase: 5ms
6. Ready/Busy Signal During Programming
7. 2MHz Clock Rate
8. Sequential Read Operation
9. Enhanced ESD/Latch-Up Behavior

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93C66WP Datasheet