D2498 Datasheet – 600V, 6A, NPN Transistor

Part Number : D2498

Function : 600V, 6A, Silicon NPN Transistor

Package : TO-3P(H) IS Type

Manufacturers : Huajin Microeletronics ( http://www.crhj.com.cn )

Images :

D2498 transistor circuit

Description :

D2498 silicon NPN high back pressure high power transistor, mainly used as a 21-inch color TV switching power supply, this product uses a mesa structure process.

1. high breakdown voltage, leakage current
2. switching speed
3. saturation pressure drop
4. Good current characteristics

Pinout

D2498 datasheet

Absolute maximum ratings

1. Collector−Base Voltage : VCBO = 1500 V
2. Collector−Emitter Voltage : VCEO = 600 V
3. Emitter−Base Voltage : VEBO = 5 V
4. Collector Current : DC IC = 6A, Pulse ICP = 12 A
5. Base Current : IB = 3 A
6. Collector Power Dissipation : PC = 50 W

Applications

1. Low frequency amplification bipolar transistor
2. High Speed Switching
3. Horizontal deflection output

 

Other data sheets within the file : 3DD2498

D2498 Transistor Datasheet

 

 

3DD2498 pdf

BAS16-02L Datasheet PDF – Silicon Switching Diode

Part Number : BAS16-02L

Function : Silicon Switching Diode

Package : TSLP-2-1

Marking : A6

Manufacturers : Infineon Technologies

Image :

BAS16-02L datasheet

 

Description :

1. For high-speed switching applications
2. Electrical insulated diodes
3. Pb-free (RoHS compliant) package1),
4. Qualified according AEC Q101

Text :

Silicon Switching Diode, BAS16… BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W, BAS16S BAS16U , BAS16-07L4, Type BAS16 BAS16-02L- BAS16-02V BAS16-02W BAS16-03W BAS16-07L4- BAS16S BAS16U BAS16W – Preliminary Data Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 Configuration single single, leadless single single single parallel pair, leadless parallel triple parallel triple single 1Pb-containing package may be available upon special request Marking A6s A6 6 A6 white B 6A A6s A6s A6s 1 2009-09-28 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current BAS16 VR VRM IF BAS16-02L, -07L4 BAS16-02V, -02W BAS16-03W BAS16S BAS16U BAS16W Non-repetitive peak surge forward current t = 1 µs, BAS16/ S/ U/ W/ -03W t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 t=1s Total power dissipation BAS16, TS ≤ 54 °C BAS16-02L, -07L4, TS ≤ 130 °C BAS16-02V, -02W, TS ≤ 120 °C BAS16-03W, TS ≤ 116 °C BAS16S, TS ≤ 85 °C BAS16U, TS ≤ 113 °C BAS16W, TS ≤ 119 °C Junction temperature Storage temperature IFSM Ptot Tj Tstg BAS16… Value 80 85 250 200 200 250 200 200 250 4.5 2.5 0.5 370 250 250 250 250 250 250 150 -65 …150 Unit V mA A mW °C 2 2009-09-28 BAS16… Thermal Resistance Parameter Junction – soldering point1) BAS16, BAS16S BAS16-02L, -07L4 BAS16-02V, -02W BAS16-03W BAS16U BAS16W Symbol RthJS Value ≤ 260 ≤ 80 ≤ 120 ≤ 135 ≤ 150 ≤ 125 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Breakdown voltage V(BR) 85 – – I(BR) = 100 µA Reverse current IR VR = 75 V –1 VR = 25 V, TA = 150 °C – – 30 VR = 75 V, TA = 150 °C – – 50 Unit V µA Forward voltage IF = 1 mA IF = 10 mA IF = 50 …

BAS16-02L Datasheet PDF Download

BAS16-02L pdf

Other data sheets within the file :  BAS16, BAS16-02V, BAS16-02W, BAS16-03W