30G124 Datasheet PDF – 430V, 200A, IGBT – GT30G124

Part Number : 30G124, GT30G124

Function : Discrete IGBT – 430V 200A

Package : TO-220SIS Type

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Image :

30G124 image

Description : 430V, 200A IGBT

30G124 Datasheet


1. GT30G124

– Breakdown Voltage VCES(V) @Ta = 25’C  :  430V

– IGBT Current Rating IC(A) @Ta = 25’C : 200A


2. GT30J124

– Breakdown Voltage VCES(V) @Ta = 25’C  :  600V

– IGBT Current Rating IC(A) @Ta = 25’C : 200A

GT30F124 Datasheet


Applications  : Plasma display panels

The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure. Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction.


toshiba igbt pinout


Features of the Toshiba Discrete IGBTs

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages


30G124 Datasheet PDF Download

30G124 pdf


Other data sheets within the file : GT30F124, GT45F127, GT30F125, GT30G124, GT30G125,  GT45G127, GT45G128, GT30J124

K3569 Datasheet – Vdss=600V, MOSFET Transistor – Toshiba

This is one of the transistor types.

This part name is K3569, 2SK3569.

The function has N-Channel MOS Field Effect Transistor.

Manufacturers of product is Toshiba.

See the preview image and the PDF file for more information.





1.  Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 8.5S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)


Pinout for K3569

K3569 datasheet


Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 600 V

2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 600 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain current DC : ID = 10 A

5. Drain power dissipation (Tc =25°C) : PD = 45 W

6. Single pulse avalanche energy : EAS = 363 mJ

7. Avalanche current : IAR = 10 A

8. Channel temperature : Tch = 150 °C

9. Storage temperature range : Tstg = -55~150 °C



1. Switching Regulator


K3569 Datasheet