Part Number : K1117
Function : V dss = 600V, N-Channel MOSFET
Package : TO-220AB Type
Manufacturers : Toshiba
Image :
Description :
Field Effect Transistor
1. Silicon N-Channel MOS Type
2. High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications.
Pinout
Absolute Maximum Ratings (Ta = 25°C)
Drain to source voltage : VDSS = 600 V
Gate to source voltage : VGSS = 600 V
Drain peak current : ID(pulse) = 6 A
Drain current : IDR = 24 A
Drain Power dissipation : Pd = 100 W
Channel temperature : Tch = 100 °C
Storage temperature : Tstg = -55 ~ +150 °C
Other data sheets within the file : 2SK1117
K1117 Datasheet PDF Download
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