20N60 Datasheet – 600V, 20A, N-Ch, MOSFET

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : 20N60

Function : 600V, MOSFET

Package : TO-247, TO-3P Type

Manufacturers : Unisonic Technologies

Image :

20N60 transistor

Description :

The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.

 

20N60 Pinout

20N60 pinout

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS =  ± 30 V
3. Drain current : ID = 20 A
4. Drain power dissipation : PD = 370 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C

Applications

1. Motor control
2. UPS
3. DC choppers and switch-mode
4. Resonant-mode power supplies

20N60 Datasheet

20N60 pdf

RU6888R Datasheet – 68V, N-Ch, MOSFET

This is one of the MOSFET types. This is a kind of the transistor.

The Part Number is RU6888R. The package is TO-220FB-3L Type.

Manufacturers : Ruichips

Images

RU6888R datasheet transistor

Description :

N-Channel Advanced power MOSFET

( equivalent, replacement )

Features

1. 68V / 88A, Rds(on) = 6mΩ (Typ.) @ VGS = 10 V
2. Ultra Low On-resistance
3. Exceptional dv/dt capability
4. Fast Switching and fully avalanche rated
5. 100% avalanche tested
6. Lead free and green available

[…]

RU6888R Pinout

RU6888R pinout mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 68 V
2. Gate to source voltage : VGSS = ± 25 V
3. Drain power dissipation : PD = 120 W

Applications

1. Switching appplicatin systems
2. Inverter systems

RU6888R Datasheet

RU6888R datasheet