1. Collector to Base Voltage : Vcbo = -50 V 2. Collector to Emitter Voltage : Vceo = -50 V 3. Emitter to Base Voltage : Vebo = -5 V 4. Collector Current : Ic = -150 mA 5. Total Dissipation : Pc = 400 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
Other data sheets within the file : KSAA1015, KSAA1015GRTA, KSAA1015YTA
This post explains for the semiconductor Power MOSFET.
The Part Number is IRC630. The Package is TO-220 Type
The function of this semiconductor is HEXFET Power MOSFET.
Manufacturers : International Rectifier
Preview images :
Third Generation HEXFETs from international Rectifier provide the desinger with the best combination of fast switching, reggedized device design, low on-resistance and cost-effeciveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used of control or protection of the device.
1. Dynamic dv/dt Rating 2. Repetitive Avalanche Rated 3. Current Sense 4. Fast Switching 5. Ease of Paralleling 6. Simple Drive Requirements