FQP6N60C Datasheet PDF – 600V, N-Channel MOSFET

Part Number : FQP6N60C

Function : 600V, N-Channel MOSFET

Package : TO-220 Type

Manufacturers : Fairchild Semiconductor

Pinouts :
FQP6N60C datasheet

General Description :

These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Other data sheets within the file : 6N60C, FQP6N60C, FQPF6N60C

FQP6N60C Datasheet PDF Download

FQP6N60C pdf

 

2SK950 Datasheet – 500V, N-Channel MOSFET – FUJI

Part Number : 2SK950

Function : Fuji N-channel Silicon Power MOSFET

Package : TO-220AB Type

Manufacturers : Fuji Electric

Image :

2SK950 datasheet mosfet transistor

Features

1. High Speed Switching
2. Low on-resistance
3. No secondary breakdown
4. Low driving power
5. High voltage

Applications

1. Switching regulators
2. UPS
3. DC-DC converters
4. General purpose powe amplifer

Pinouts :

2SK950 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V
2. Drain current : ID = 6 A
3. Drain peak current : ID(pulse) = 24 A
4. Body to drain diode reverse drain current : IDR = 6 A
5. Gate to source voltage : VGSS = ± 20 V
6. Power dissipation : Pd = 80 W
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 ~ +150 °C

Other data sheets within the file : K950

2SK950 Datasheet PDF Download


2SK950 pdf